Inventor

ZHENG YUANKAI

US103 patents

⚠️ This page may combine multiple inventors who share the name “ZHENG YUANKAI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ZHENG YUANKAI

SEAGATE TECHNOLOGY LLC

Magnetic stack having reference layers with orthogonal magnetization orientation directions

Stram with self-reference read scheme

Variable write and read methods for resistive random access memory

Non-volatile memory cell with precessional switching

Memory cell with phonon-blocking insulating layer

Magnetic stack having assist layers

STRAM with composite free magnetic element

Thermally assisted multi-bit MRAM

Flux-closed STRAM with electronically reflective insulative spacer

Semiconductor device with thermally coupled phase change layers

STRAM with compensation element

Magnetic stack with laminated layer

Variable write and read methods for resistive random access memory

Thermally assisted multi-bit MRAM

WESTERN DIGITAL FREMONT LLC

Method and system for providing a magnetic read transducer having a bilayer magnetic seed layer

Magnetoresistive sensor for a magnetic storage system read head, and fabrication method thereof

Magnetic recording read transducer having a laminated free layer

Method of manufacturing a magnetic read head

Sensor with positive coupling between dual ferromagnetic free layer laminates

Spin transfer torque tunneling magnetoresistive device having a laminated free layer with perpendicular magnetic anisotropy

Free layer only magnetic reader that may have a reduced shield-to-shield spacing and a multilayer side bias

Magnetic recording read transducer having a laminated free layer

ZHENG YUANKAI

Magnetic sensor having a high spin polarization reference layer

Perpendicular magnetic recording transducer with AFM insertion layer

Magnetic stack having assist layer

STRAM with composite free magnetic element

Memory cell with phonon-blocking insulating layer

Non volatile memory including stabilizing structures

Thermally assisted multi-bit MRAM

Magnetic memory with phonon glass electron crystal material

WESTERN DIGITAL TECH INC

Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with wedge shaped free layer

Magnetoresistive device comprising a synthetic antiferromagnetic coupling layer of RuAl having a (001) texture

Magnetic elements of amorphous based dual free layer structures and recording devices using such elements

MAMR head with synthetic antiferromagnetic (SAF) coupled notch

TMR sensor with magnetic tunnel junctions with a free layer having an intrinsic anisotropy

Magnetoresistive devices comprising a synthetic antiferromagnetic coupling layer of RuAl having a (110) texture

Read sensor with ordered heusler alloy free layer and semiconductor barrier layer

WESTERN DIGITAL (FREMONT) LLC

Magnetic read apparatus having multiple read sensors with reduced sensor spacing usable in two-dimensional magnetic recording applications

Free layer magnetic reader that may have a reduced shield-to-shield spacing

Magnetic reader having a nonmagnetic insertion layer for the pinning layer

Magnetic reader having a crystal decoupling structure

Spin transfer torque tunneling magnetoresistive device having a laminated free layer with perpendicular magnetic anisotropy

GUO YIMIN

Magnetic recording sensor with AFM exchange coupled shield stabilization

LENG QUNWEN

Method and system for providing a magnetic read transducer having a bilayer magnetic seed layer

SEAGATE TECHNOLOGY

Magnetic stack having assist layer

AGENCY SCIENCE TECH & RES

Magnetic memory device

INST DATA STORAGE

Magnetic tunnel junction magnetic random access memory

SANDISK TECHNOLOGIES LLC

Read head including semiconductor spacer and long spin diffusion length nonmagnetic conductive material and method of making thereof

LOU XIAOHUA

Magnetic stack with oxide to reduce switching current

XI HAIWEN

Magnetic memory element with multi-domain storage layer