Inventor
SAMANT MAHESH G
US15 patents
⚠️ This page may combine multiple inventors who share the name “SAMANT MAHESH G”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
11 patentsUS6518588B1Feb 11, 2003
Magnetic random access memory with thermally stable magnetic tunnel junction cells
IBM141 citations97
US10396123B2Aug 27, 2019
Templating layers for perpendicularly magnetized Heusler films
IBM9 citations84
US10177305B2Jan 8, 2019
Templating layers for perpendicularly magnetized heusler films
IBM12 citations84
US10170696B1Jan 1, 2019
MnN and Heusler layers in magnetic tunnel junctions
IBM6 citations84
US9406365B1Aug 2, 2016
Underlayers for textured films of Heusler compounds
IBM4 citations73
US10957848B2Mar 23, 2021
Heusler compounds with non-magnetic spacer layer for formation of synthetic anti-ferromagnets (SAF)
IBM3 citations71
US10247701B2Apr 2, 2019
Dissolved-oxygen sensor utilizing ionic oxygen motion
IBM2 citations71
US9666215B2May 30, 2017
Termination layer-compensated tunneling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy
IBM2 citations68
US11557721B2Jan 17, 2023
Heusler compounds with non-magnetic spacer layer for formation of synthetic anti-ferromagnets (SAF)
IBM0 citations61
US9590176B2Mar 7, 2017
Controlling the conductivity of an oxide by applying voltage pulses to an ionic liquid
IBM0 citations51
US10256490B2Apr 9, 2019
Oxygen-separating device utilizing ionic oxygen motion
IBM0 citations40
SAMSUNG ELECTRONICS CO LTD
4 patentsUS11005029B2May 11, 2021
Spin transfer torque switching of a magnetic layer with volume uniaxial magnetic crystalline anistotropy
SAMSUNG ELECTRONICS CO LTD5 citations72
US10937953B2Mar 2, 2021
Tunable tetragonal ferrimagnetic heusler compound with PMA and high TMR
SAMSUNG ELECTRONICS CO LTD3 citations72
US10651234B2May 12, 2020
Templating layers for forming highly textured thin films of heusler compounds switchable by application of spin transfer torque
SAMSUNG ELECTRONICS CO LTD2 citations72
US11665979B2May 30, 2023
Magnetic junctions having enhanced tunnel magnetoresistance and utilizing heusler compounds
SAMSUNG ELECTRONICS CO LTD2 citations71