Inventor · disambiguated record
Wan-Hua Huang
Also filed as: HUANG WAN-HUA
9 granted patents·4 pending applications·12 citations·filing 2007–2024
83Inventor score
Top patents by PatentIndex Score
13 records- 0195US11935950B2High voltage transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 19, 2024·2 cites·20 claims
- 0284US11107916B2High voltage transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 31, 2021·2 cites·20 claims
- 0383US2025040219A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0483US2024186412A1High Voltage Transistor StructureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0578US12119384B2Semiconductor device having conductive field plate overlapping an edge of an active regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 15, 2024·0 cites·20 claims
- 0677US9799766B2High voltage transistor structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 24, 2017·2 cites·20 claims
- 0771US8022446B2Integrated Schottky diode and power MOSFETTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Sep 20, 2011·5 cites·18 claims
- 0870US10553687B2Semiconductor device having conductive feature overlapping an edge of an active regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Feb 4, 2020·1 cites·20 claims
- 0967US11527624B2Method of manufacturing a semiconductor device having a conductive field plate and a first wellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 13, 2022·0 cites·20 claims
- 1059US10269959B2High voltage transistor structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·0 cites·20 claims
- 1157US2025194144A1Semiconductor device having contact field plate (cfp) and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1242US9761494B2Semiconductor structure and method of forming the sameCHEN PO-YU·Filed 2012·Granted Sep 12, 2017·0 cites·18 claims
- 1340US2014264588A1Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) with Step OxideTAIWAN SEMICONDUCTOR MFG·Filed 2013·Application pending·0 cites
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