Inventor
WOOD ANDREW CHRISTOPHER GRAEME
AT14 patents
⚠️ This page may combine multiple inventors who share the name “WOOD ANDREW CHRISTOPHER GRAEME”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
12 patentsUS11018250B2May 25, 2021
Semiconductor device with multi-branch gate contact structure
INFINEON TECHNOLOGIES AG2 citations72
US9356141B2May 31, 2016
Semiconductor device having peripheral trench structures
INFINEON TECHNOLOGIES AG4 citations72
US11695069B2Jul 4, 2023
Gate contact structure for semiconductor device
INFINEON TECHNOLOGIES AG0 citations61
US11127853B2Sep 21, 2021
Power transistor device including first and second transistor cells having different on-resistances for improved thermal stability
INFINEON TECHNOLOGIES AG0 citations55
US9917160B2Mar 13, 2018
Semiconductor device having a polycrystalline silicon IGFET
INFINEON TECHNOLOGIES AG0 citations51
US9847387B2Dec 19, 2017
Field effect semiconductor component and method for producing it
INFINEON TECHNOLOGIES AG0 citations49
US9391192B2Jul 12, 2016
Field effect semiconductor component and method for producing it
INFINEON TECHNOLOGIES AG0 citations49
US10535576B2Jan 14, 2020
Semiconductor devices and methods of formation thereof
INFINEON TECHNOLOGIES AG0 citations45
US9799583B2Oct 24, 2017
Semiconductor devices and methods of formation thereof
INFINEON TECHNOLOGIES AG0 citations45
US10593799B2Mar 17, 2020
Semiconductor component comprising trench structures and production method therefor
INFINEON TECHNOLOGIES AG0 citations39
US10453915B2Oct 22, 2019
Semiconductor device having a field electrode and a gate electrode in a trench structure and manufacturing method
INFINEON TECHNOLOGIES AG0 citations39
US10580656B2Mar 3, 2020
Method of reducing trench depth variation from reactive ion etching process
INFINEON TECHNOLOGIES AG0 citations34