Inventor
RO JEONG RAE
KR11 patents
⚠️ This page may combine multiple inventors who share the name “RO JEONG RAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
KOREA ELECTRONICS TELECOMM
7 patentsUS6033972AMar 7, 2000
Growing method of GaAs quantum dots using chemical beam epitaxy
KOREA ELECTRONICS TELECOMM31 citations92
US5858818AJan 12, 1999
Formation of InGaSa p-n Junction by control of growth temperature
KOREA ELECTRONICS TELECOMM17 citations79
US6074936AJun 13, 2000
Method of fabricating a quantum device
KOREA ELECTRONICS TELECOMM10 citations73
US5770475AJun 23, 1998
Crystal growth method for compound semiconductor
KOREA ELECTRONICS TELECOMM7 citations73
US5833870ANov 10, 1998
Method for forming a high density quantum wire
KOREA ELECTRONICS TELECOMM3 citations62
US5824453AOct 20, 1998
Fabricating method of GaAs substrate having V-shaped grooves
KOREA ELECTRONICS TELECOMM2 citations62
US6242275B1Jun 5, 2001
Method for manufacturing quantum wires
KOREA ELECTRONICS TELECOMM1 citations51
SEOUL VIOSYS CO LTD
4 patentsUS11404848B2Aug 2, 2022
Vertical-cavity surface-emitting laser
SEOUL VIOSYS CO LTD1 citations67
US11764544B2Sep 19, 2023
Vertical-cavity surface-emitting laser
SEOUL VIOSYS CO LTD1 citations59
US12068582B2Aug 20, 2024
Vertical-cavity surface-emitting laser
SEOUL VIOSYS CO LTD0 citations57
US11764545B2Sep 19, 2023
Vertical-cavity surface-emitting laser
SEOUL VIOSYS CO LTD0 citations57