Inventor
KEMLAGE BERNARD M
US11 patents
Patents
11 patentsUS4454647AJun 19, 1984
Isolation for high density integrated circuits
IBM121 citations95
US4239811ADec 16, 1980
Low pressure chemical vapor deposition of silicon dioxide with oxygen enhancement of the chlorosilane-nitrous oxide reaction
IBM55 citations95
US4385975AMay 31, 1983
Method of forming wide, deep dielectric filled isolation trenches in the surface of a silicon semiconductor substrate
IBM60 citations93
US4688069AAug 18, 1987
Isolation for high density integrated circuits
IBM53 citations92
US4454646AJun 19, 1984
Isolation for high density integrated circuits
IBM33 citations92
US4254161AMar 3, 1981
Prevention of low pressure chemical vapor deposition silicon dioxide undercutting and flaking
IBM43 citations92
US4508757AApr 2, 1985
Method of manufacturing a minimum bird's beak recessed oxide isolation structure
IBM81 citations91
US4431460AFeb 14, 1984
Method of producing shallow, narrow base bipolar transistor structures via dual implantations of selected polycrystalline layer
IBM41 citations86
US4437897AMar 20, 1984
Fabrication process for a shallow emitter/base transistor using same polycrystalline layer
IBM24 citations81
US3963539AJun 15, 1976
Two stage heteroepitaxial deposition process for GaAsP/Si LED's
IBM23 citations78
US3963538AJun 15, 1976
Two stage heteroepitaxial deposition process for GaP/Si
IBM30 citations76