Inventor
SLAUGHTER JON
US75 patents
⚠️ This page may combine multiple inventors who share the name “SLAUGHTER JON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
EVERSPIN TECHNOLOGIES INC
33 patentsUS9419208B2Aug 16, 2016
Magnetoresistive memory element and method of fabricating same
EVERSPIN TECHNOLOGIES INC76 citations99
US9136464B1Sep 15, 2015
Apparatus and process for manufacturing ST-MRAM having a metal oxide tunnel barrier
EVERSPIN TECHNOLOGIES INC76 citations98
US9553258B2Jan 24, 2017
Magnetoresistive memory element and method of fabricating same
EVERSPIN TECHNOLOGIES INC16 citations92
US9269891B2Feb 23, 2016
Process integration of a single chip three axis magnetic field sensor
EVERSPIN TECHNOLOGIES INC9 citations92
US9159906B2Oct 13, 2015
Spin-torque magnetoresistive memory element and method of fabricating same
EVERSPIN TECHNOLOGIES INC18 citations92
US11024799B2Jun 1, 2021
Methods of manufacturing a magnetic field sensor
EVERSPIN TECHNOLOGIES INC3 citations84
US10347828B2Jul 9, 2019
Magnetoresistive stack and method of fabricating same
EVERSPIN TECHNOLOGIES INC3 citations84
US10276789B2Apr 30, 2019
Methods of manufacturing a magnetic field sensor
EVERSPIN TECHNOLOGIES INC4 citations84
US10199574B2Feb 5, 2019
Magnetoresistive stack and method of fabricating same
EVERSPIN TECHNOLOGIES INC4 citations84
US9947865B2Apr 17, 2018
Magnetoresistive stack and method of fabricating same
EVERSPIN TECHNOLOGIES INC5 citations84
US9893274B2Feb 13, 2018
Methods of manufacturing a magnetic field sensor
EVERSPIN TECHNOLOGIES INC6 citations84
USRE46428EJun 6, 2017
Three axis magnetic field sensor
EVERSPIN TECHNOLOGIES INC7 citations84
US9640753B2May 2, 2017
Magnetic field sensor
EVERSPIN TECHNOLOGIES INC8 citations84
US9576636B1Feb 21, 2017
Magnetic memory having ROM-like storage and method therefore
EVERSPIN TECHNOLOGIES INC10 citations84
US9553261B2Jan 24, 2017
Methods of manufacturing a magnetic field sensor
EVERSPIN TECHNOLOGIES INC6 citations84
US9525129B2Dec 20, 2016
Methods of manufacturing a magnetic field sensor
EVERSPIN TECHNOLOGIES INC6 citations84
US9502089B2Nov 22, 2016
Short detection and inversion
EVERSPIN TECHNOLOGIES INC5 citations84
USRE46180EOct 18, 2016
Three axis magnetic field sensor
EVERSPIN TECHNOLOGIES INC8 citations84
US9444037B2Sep 13, 2016
Magnetoresistive memory element having a metal oxide tunnel barrier
EVERSPIN TECHNOLOGIES INC5 citations84
US9362491B2Jun 7, 2016
Methods of manufacturing a magnetic field sensor
EVERSPIN TECHNOLOGIES INC6 citations84
US8647891B2Feb 11, 2014
Two-axis magnetic field sensor having reduced compensation angle for zero offset
EVERSPIN TECHNOLOGIES INC9 citations84
US10622554B2Apr 14, 2020
Magnetoresistive stack and method of fabricating same
EVERSPIN TECHNOLOGIES INC1 citations73
US10622552B2Apr 14, 2020
Magnetoresistive stacks and methods therefor
EVERSPIN TECHNOLOGIES INC4 citations73
US10535390B2Jan 14, 2020
Magnetoresistive devices and methods therefor
EVERSPIN TECHNOLOGIES INC5 citations73
US10461243B2Oct 29, 2019
Tuning magnetic anisotropy for spin-torque memory
EVERSPIN TECHNOLOGIES INC2 citations73
US10255961B2Apr 9, 2019
Data storage in synthetic antiferromagnets included in magnetic tunnel junctions
EVERSPIN TECHNOLOGIES INC2 citations73
US10199122B2Feb 5, 2019
Short detection and inversion
EVERSPIN TECHNOLOGIES INC3 citations73
US9881695B2Jan 30, 2018
Short detection and inversion
EVERSPIN TECHNOLOGIES INC2 citations73
US9773970B2Sep 26, 2017
Magnetic field sensor
EVERSPIN TECHNOLOGIES INC2 citations73
US9766301B2Sep 19, 2017
Method for reset and stabilization control of a magnetic sensor
EVERSPIN TECHNOLOGIES INC2 citations73
US9721632B2Aug 1, 2017
Redundant magnetic tunnel junctions in magnetoresistive memory
EVERSPIN TECHNOLOGIES INC4 citations73
US9548095B2Jan 17, 2017
Redundant magnetic tunnel junctions in magnetoresistive memory
EVERSPIN TECHNOLOGIES INC3 citations73
US9455015B2Sep 27, 2016
High temperature data retention in magnetoresistive random access memory
EVERSPIN TECHNOLOGIES INC6 citations73
MOTOROLA INC
9 patentsUS6174737B1Jan 16, 2001
Magnetic random access memory and fabricating method thereof
MOTOROLA INC270 citations99
US5940319AAug 17, 1999
Magnetic random access memory and fabricating method thereof
MOTOROLA INC313 citations99
US6205052B1Mar 20, 2001
Magnetic element with improved field response and fabricating method thereof
MOTOROLA INC96 citations98
US6365419B1Apr 2, 2002
High density MRAM cell array
MOTOROLA INC101 citations97
US6544801B1Apr 8, 2003
Method of fabricating thermally stable MTJ cell and apparatus
MOTOROLA INC99 citations96
US6183859B1Feb 6, 2001
Low resistance MTJ
MOTOROLA INC55 citations96
US6281538B1Aug 28, 2001
Multi-layer tunneling device with a graded stoichiometry insulating layer
MOTOROLA INC26 citations93
US6261646B1Jul 17, 2001
Method of making a low resistance MTJ
MOTOROLA INC15 citations84
US6395595B2May 28, 2002
Multi-layer tunneling device with a graded stoichiometry insulating layer
MOTOROLA INC5 citations74
WHIG RENU
2 patentsMATHER PHILLIP
2 patentsIBM
1 patentTHOMAS ANDRE
1 patentLIU LIANJUN
1 patentSUN JIJUN
1 patentShowing the top 50 of 75 patents by PatentIndex Score.