Inventor
YAN SHIH-GUEI
TW18 patents
⚠️ This page may combine multiple inventors who share the name “YAN SHIH-GUEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MACRONIX INT CO LTD
12 patentsUS9373629B1Jun 21, 2016
Memory device and method for fabricating the same
MACRONIX INT CO LTD3 citations72
US8981459B2Mar 17, 2015
Structure and manufacturing method of a non-volatile memory
MACRONIX INT CO LTD3 citations62
US9786794B2Oct 10, 2017
Method of fabricating memory structure
MACRONIX INT CO LTD0 citations51
US9349878B2May 24, 2016
Multi level programmable memory structure
MACRONIX INT CO LTD0 citations51
US9070588B2Jun 30, 2015
Non-volatile memory structure
MACRONIX INT CO LTD0 citations51
US9048263B2Jun 2, 2015
Manufacturing method of non-volatile memory
MACRONIX INT CO LTD0 citations51
US9018085B2Apr 28, 2015
Method of fabricating memory device with charge storage layer at gap located side of gate dielectric underneath the gate
MACRONIX INT CO LTD0 citations51
US8952440B2Feb 10, 2015
Memory device and method of forming the same
MACRONIX INT CO LTD0 citations51
US8835297B2Sep 16, 2014
Fabricating method of non-volatile memory structure
MACRONIX INT CO LTD0 citations51
US9385240B1Jul 5, 2016
Memory device and method for fabricating the same
MACRONIX INT CO LTD1 citations47
US9269583B1Feb 23, 2016
Method for fabricating memory device
MACRONIX INT CO LTD0 citations41
US9209198B2Dec 8, 2015
Memory cell and manufacturing method thereof
MACRONIX INT CO LTD0 citations41
YAN SHIH-GUEI
3 patentsUS8698222B2Apr 15, 2014
Memory device with charge storage layers at the gaps located both sides of the gate dielectric underneath the gate
YAN SHIH-GUEI0 citations48
US8664709B2Mar 4, 2014
Non-volatile memory and fabricating method thereof
YAN SHIH-GUEI0 citations48
US8674424B2Mar 18, 2014
Memory device with charge storage layers at the sidewalls of the gate and method for fabricating the same
YAN SHIH-GUEI0 citations38