P

Inventor

SHUTO SUSUMU

JP38 patents
⚠️ This page may combine multiple inventors who share the name “SHUTO SUSUMU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOSHIBA KK

30 patents
US6014330AJan 11, 2000

Non-volatile semiconductor memory device

TOSHIBA KK120 citations99
US5990507ANov 23, 1999

Semiconductor device having ferroelectric capacitor structures

TOSHIBA KK229 citations99
US5946231AAug 31, 1999

Non-volatile semiconductor memory device

TOSHIBA KK129 citations99
US5774397AJun 30, 1998

Non-volatile semiconductor memory device and method of programming a non-volatile memory cell to a predetermined state

TOSHIBA KK1,150 citations99
US5555204ASep 10, 1996

Non-volatile semiconductor memory device

TOSHIBA KK203 citations99
US6190957B1Feb 20, 2001

Method of forming a ferroelectric device

TOSHIBA KK70 citations96
US6188611B1Feb 13, 2001

Non-volatile semiconductor memory device

TOSHIBA KK79 citations96
US7535745B2May 19, 2009

Ferroelectric memory device and method of manufacturing the same

TOSHIBA KK24 citations92
US7289365B2Oct 30, 2007

Nonvolatile semiconductor memory device in which write and erase threshold voltages are set at levels symmetrical about neutral threshold voltage of cell transistor

TOSHIBA KK19 citations92
US6335876B1Jan 1, 2002

Semiconductor memory and method of testing the same

TOSHIBA KK33 citations92
US6313491B1Nov 6, 2001

Semiconductor memory having cell including transistor and ferroelectric capacitor

TOSHIBA KK27 citations92
US6187632B1Feb 13, 2001

Anneal technique for reducing amount of electronic trap in gate oxide film of transistor

TOSHIBA KK21 citations91
US6100579AAug 8, 2000

Insulating film for use in semiconductor device

TOSHIBA KK21 citations91
US9324406B2Apr 26, 2016

Semiconductor memory device

TOSHIBA KK7 citations84
US8953359B2Feb 10, 2015

Semiconductor memory device

TOSHIBA KK11 citations84
US7348617B2Mar 25, 2008

Semiconductor device

TOSHIBA KK14 citations84
US7339828B2Mar 4, 2008

Nonvolatile semiconductor memory device with memory cells, each having an FG cell transistor and select gate transistor, and a method of writing data into the same

TOSHIBA KK12 citations84
US6984861B2Jan 10, 2006

Semiconductor memory device having a ferroelectric capacitor

TOSHIBA KK16 citations84
US6934179B2Aug 23, 2005

Semiconductor integrated circuit device and bit line capacitance adjusting method using the device

TOSHIBA KK9 citations74
US6172897B1Jan 9, 2001

Semiconductor memory and write and read methods of the same

TOSHIBA KK10 citations74
US7663905B2Feb 16, 2010

Ferroelectric memory device and data read method in same

TOSHIBA KK4 citations63
US7436691B2Oct 14, 2008

Semiconductor storage device, operation method of the same and test method of the same

TOSHIBA KK4 citations63
US7417274B2Aug 26, 2008

Semiconductor device including direct contact between capacitor electrode and contact plug and method of manufacturing the same

TOSHIBA KK2 citations63
US7266023B2Sep 4, 2007

Nonvolatile semiconductor memory device which reads by decreasing effective threshold voltage of selector gate transistor

TOSHIBA KK5 citations63
US7050338B2May 23, 2006

Semiconductor integrated circuit device having memory cells divided into groups

TOSHIBA KK3 citations63
US7046542B2May 16, 2006

Semiconductor integrated circuit device

TOSHIBA KK3 citations63
US9384829B2Jul 5, 2016

Memory device

TOSHIBA KK2 citations62
US8854914B2Oct 7, 2014

Semiconductor memory device

TOSHIBA KK0 citations52
US6944007B2Sep 13, 2005

Capacitor structure

TOSHIBA KK0 citations52
US7551472B2Jun 23, 2009

Ferroelectric semiconductor memory device

TOSHIBA KK0 citations42

SHUTO SUSUMU

5 patents

YAMANAKA TAKAYA

2 patents

KANAYA HIROYUKI

1 patent