Inventor

BOBDE MADHUR

US173 patents

⚠️ This page may combine multiple inventors who share the name “BOBDE MADHUR”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

BOBDE MADHUR

ALPHA & OMEGA SEMICONDUCTOR

Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter

Device structure and methods of making high density MOSFETs for load switch and DC-DC applications

High frequency switching MOSFETs with low output capacitance using a depletable P-shield

High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices

Semiconductor device including superjunction structure formed using angled implant process

Device structure and methods of making high density MOSFETs for load switch and DC-DC applications

High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices

High frequency switching MOSFETs with low output capacitance using a depletable P-shield

Latch-up free vertical TVS diode array structure using trench isolation

Methods of achieving linear capacitance in symmetrical and asymmetrical EMI filters with TVS

Symmetric blocking transient voltage suppressor (TVS) using bipolar transistor base snatch

Transient voltage suppressor (TVS) with reduced breakdown voltage

Lateral super-junction MOSFET device and termination structure

Split-gate trench power MOSFET with protected shield oxide

Methods of achieving linear capacitance in symmetrical and asymmetrical EMI filters with TVS

High voltage field balance metal oxide field effect transistor (FBM)

Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact

Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter

Injection control in semiconductor power devices

High frequency switching MOSFETs with low output capacitance using a depletable P-shield

Integrating enhancement mode depleted accumulation/inversion channel devices with MOSFETs

Device structure and methods of making high density MOSFETs for load switch and DC-DC applications

High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices

Semiconductor device with termination structure for power MOSFET applications

Injection control in semiconductor power devices

Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact

Method for forming dual oxide trench gate power MOSFET using oxide filled trench

Edge termination configurations for high voltage semiconductor power devices

High voltage field balance metal oxide field effect transistor (FBM)

Normally on high voltage switch

High voltage fast recovery trench diode

BOBDE MADHUR

High frequency switching MOSFETs with low output capacitance using a depletable P-shield

Lateral super junction device with high substrate-drain breakdown and built-in avalanche clamp diode

Buried field ring field effect transistor (BUF-FET) integrated with cells implanted with hole supply path

TVS with low capacitance and forward voltage drop with depleted SCR as steering diode

Optimized configurations to integrate steering diodes in low capacitance transient voltage suppressor (TVS)

Diode structures with controlled injection efficiency for fast switching

TVS with low capacitance and forward voltage drop with depleted SCR as steering diode

GUAN LINGPENG

Corner layout for superjunction device

Low capacitance transient voltage suppressor (TVS) with reduced clamping voltage

Corner layout for superjunction device

Staggered column superjunction

BHALLA ANUP

Split-gate structure in trench-based silicon carbide power device

High voltage field balance metal oxide field effect transistor (FBM)

VISHAY SILICONIX

Transistor structure with improved unclamped inductive switching immunity

Transistor structure with improved unclamped inductive switching immunity

HU JUN

High voltage fast recovery trench diode

Dual-gate trench IGBT with buried floating P-type shield

YILMAZ HAMZA

Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact

MALLIKARARJUNASWAMY SHEKAR

Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter