Inventor
MUI MAN L
US35 patents
⚠️ This page may combine multiple inventors who share the name “MUI MAN L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK TECHNOLOGIES INC
26 patentsUS9552882B2Jan 24, 2017
Sense amplifier with efficient use of data latches
SANDISK TECHNOLOGIES INC22 citations94
US9343156B1May 17, 2016
Balancing programming speeds of memory cells in a 3D stacked memory
SANDISK TECHNOLOGIES INC45 citations94
US8873293B1Oct 28, 2014
Dynamic erase voltage step size selection for 3D non-volatile memory
SANDISK TECHNOLOGIES INC32 citations94
US9202579B2Dec 1, 2015
Compensation for temperature dependence of bit line resistance
SANDISK TECHNOLOGIES INC34 citations93
US9171632B2Oct 27, 2015
Reducing weak-erase type read disturb in 3D non-volatile memory
SANDISK TECHNOLOGIES INC16 citations93
US9330778B2May 3, 2016
Group word line erase and erase-verify methods for 3D non-volatile memory
SANDISK TECHNOLOGIES INC15 citations92
US9142298B2Sep 22, 2015
Efficient smart verify method for programming 3D non-volatile memory
SANDISK TECHNOLOGIES INC21 citations92
US8982626B2Mar 17, 2015
Program and read operations for 3D non-volatile memory based on memory hole diameter
SANDISK TECHNOLOGIES INC26 citations92
US8891308B1Nov 18, 2014
Dynamic erase voltage step size selection for 3D non-volatile memory
SANDISK TECHNOLOGIES INC29 citations92
US8824211B1Sep 2, 2014
Group word line erase and erase-verify methods for 3D non-volatile memory
SANDISK TECHNOLOGIES INC16 citations92
US9142304B2Sep 22, 2015
Erase operation for 3D non-volatile memory with controllable gate-induced drain leakage current
SANDISK TECHNOLOGIES INC11 citations84
US9142302B2Sep 22, 2015
Efficient smart verify method for programming 3D non-volatile memory
SANDISK TECHNOLOGIES INC12 citations84
US9013928B1Apr 21, 2015
Dynamic bit line bias for programming non-volatile memory
SANDISK TECHNOLOGIES INC9 citations84
US8964480B2Feb 24, 2015
Detecting programmed word lines based on NAND string current
SANDISK TECHNOLOGIES INC9 citations84
US8953386B2Feb 10, 2015
Dynamic bit line bias for programming non-volatile memory
SANDISK TECHNOLOGIES INC14 citations84
US8885416B2Nov 11, 2014
Bit line current trip point modulation for reading nonvolatile storage elements
SANDISK TECHNOLOGIES INC13 citations84
US8830755B1Sep 9, 2014
Reducing weak-erase type read disturb in 3D non-volatile memory
SANDISK TECHNOLOGIES INC6 citations84
US9330779B2May 3, 2016
Detecting programmed word lines based on NAND string current
SANDISK TECHNOLOGIES INC5 citations73
US8942047B2Jan 27, 2015
Bit line current trip point modulation for reading nonvolatile storage elements
SANDISK TECHNOLOGIES INC4 citations73
US8879333B2Nov 4, 2014
Soft erase operation for 3D non-volatile memory with selective inhibiting of passed bits
SANDISK TECHNOLOGIES INC4 citations73
US9595345B2Mar 14, 2017
Adaptive selective bit line pre-charge for current savings and fast programming
SANDISK TECHNOLOGIES INC6 citations72
US8908444B2Dec 9, 2014
Erase for 3D non-volatile memory with sequential selection of word lines
SANDISK TECHNOLOGIES INC4 citations72
US8861280B2Oct 14, 2014
Erase for 3D non-volatile memory with sequential selection of word lines
SANDISK TECHNOLOGIES INC5 citations72
US9047973B2Jun 2, 2015
Group word line erase and erase-verify methods for 3D non-volatile memory
SANDISK TECHNOLOGIES INC3 citations63
USRE45567EJun 16, 2015
Bit line stability detection
SANDISK TECHNOLOGIES INC0 citations52
USRE45515EMay 12, 2015
Built in on-chip data scrambler for non-volatile memory
SANDISK TECHNOLOGIES INC1 citations52