Inventor
YOU JUNGGUN
KR23 patents
⚠️ This page may combine multiple inventors who share the name “YOU JUNGGUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
19 patentsUS10090413B2Oct 2, 2018
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD8 citations83
US10784376B2Sep 22, 2020
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD1 citations72
US10411131B2Sep 10, 2019
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations72
US11545489B2Jan 3, 2023
Semiconductor devices having asymmetrical structures
SAMSUNG ELECTRONICS CO LTD3 citations71
US11810964B2Nov 7, 2023
Semiconductor devices including gate spacer
SAMSUNG ELECTRONICS CO LTD3 citations69
US9799674B2Oct 24, 2017
Semiconductor devices including field effect transistors
SAMSUNG ELECTRONICS CO LTD2 citations69
US11855209B2Dec 26, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations68
USRE49963EMay 7, 2024
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US10256324B2Apr 9, 2019
Semiconductor devices having vertical transistors with aligned gate electrodes
SAMSUNG ELECTRONICS CO LTD1 citations61
US11996406B2May 28, 2024
Semiconductor devices having reflective symmetry
SAMSUNG ELECTRONICS CO LTD0 citations60
US12310079B2May 20, 2025
Semiconductor devices including gate spacer
SAMSUNG ELECTRONICS CO LTD0 citations59
US12040401B2Jul 16, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations59
US11515421B2Nov 29, 2022
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations59
US12191390B2Jan 7, 2025
Semiconductor device including stacked semiconductor patterns
SAMSUNG ELECTRONICS CO LTD0 citations58
US10559673B2Feb 11, 2020
Semiconductor devices having vertical transistors with aligned gate electrodes
SAMSUNG ELECTRONICS CO LTD0 citations50
US12211847B2Jan 28, 2025
Integrated circuit devices having highly integrated NMOS and PMOS transistors therein and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations49
US11901357B2Feb 13, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations49
US10109645B2Oct 23, 2018
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD1 citations48
US12237391B2Feb 25, 2025
Semiconductor device including a field effect transistor and a method of fabricating the semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations46