Inventor
MIRANDA LAWRENCE CELSO
US21 patents
Patents
21 patentsUS11562791B1Jan 24, 2023
Memory devices with four data line bias levels
MICRON TECHNOLOGY INC6 citations84
US12014778B2Jun 18, 2024
In-line programming adjustment of a memory cell in a memory sub-system
MICRON TECHNOLOGY INC2 citations72
US11335418B2May 17, 2022
Memory device including dynamic programming voltage
MICRON TECHNOLOGY INC2 citations72
US11462281B1Oct 4, 2022
Intervallic dynamic start voltage and program verify sampling in a memory sub-system
MICRON TECHNOLOGY INC5 citations71
US12469565B2Nov 11, 2025
Fast bit erase for upper tail tightening of threshold voltage distributions
MICRON TECHNOLOGY INC0 citations62
US12444453B2Oct 14, 2025
Volatile data storage in NAND memory
MICRON TECHNOLOGY INC0 citations62
US12254927B2Mar 18, 2025
In-line programming adjustment of a memory cell in a memory sub-system
MICRON TECHNOLOGY INC0 citations62
US11961566B2Apr 16, 2024
Fast bit erase for upper tail tightening of threshold voltage distributions
MICRON TECHNOLOGY INC0 citations62
US11742036B2Aug 29, 2023
Reducing maximum programming voltage in memory programming operations
MICRON TECHNOLOGY INC0 citations62
US11742034B2Aug 29, 2023
Memory device including dynamic programming voltage
MICRON TECHNOLOGY INC0 citations62
US12260914B2Mar 25, 2025
Level shifting in all levels programming of a memory device in a memory sub-system
MICRON TECHNOLOGY INC0 citations61
US12112819B2Oct 8, 2024
Apparatus for determining memory cell data states
MICRON TECHNOLOGY INC0 citations61
US11915758B2Feb 27, 2024
Memory devices with four data line bias levels
MICRON TECHNOLOGY INC0 citations61
US11887668B2Jan 30, 2024
All levels programming of a memory device in a memory sub-system
MICRON TECHNOLOGY INC0 citations61
US11798647B2Oct 24, 2023
Apparatus and methods for determining memory cell data states
MICRON TECHNOLOGY INC0 citations61
US11664079B2May 30, 2023
Intervallic dynamic start voltage and program verify sampling in a memory sub-system
MICRON TECHNOLOGY INC0 citations60
US11749346B2Sep 5, 2023
Overwrite mode in memory programming operations
MICRON TECHNOLOGY INC0 citations52
US12431198B2Sep 30, 2025
Charge loss acceleration during programming of memory cells in a memory sub-system
MICRON TECHNOLOGY INC0 citations51
US12347485B2Jul 1, 2025
Establishing bitline, wordline and boost voltages to manage a maximum program voltage level during all levels programming of a memory device
MICRON TECHNOLOGY INC0 citations51
US12224012B2Feb 11, 2025
All level coarse/fine programming of memory cells
MICRON TECHNOLOGY INC0 citations51
US12211552B2Jan 28, 2025
Concurrent slow-fast memory cell programming
MICRON TECHNOLOGY INC0 citations51