Inventor · disambiguated record
Doris W. Flatley
Also filed as: FLATLEY DORIS W
13 granted patents·323 citations·filing 1974–1989
93Inventor score
Top patents by PatentIndex Score
13 records- 0194US4174217AMethod for making semiconductor structureRCA CORP·Filed 1974·Granted Nov 13, 1979·67 cites·14 claims
- 0275US4927777AMethod of making a MOS transistorHARRIS CORP·Filed 1989·Granted May 22, 1990·44 cites·5 claims
- 0375US4178191AProcess of making a planar MOS silicon-on-insulating substrate deviceRCA CORP·Filed 1978·Granted Dec 11, 1979·29 cites·8 claims
- 0470US4735917ASilicon-on-sapphire integrated circuitsGEN ELECTRIC·Filed 1986·Granted Apr 5, 1988·39 cites·8 claims
- 0569US4662064AMethod of forming multi-level metallizationRCA CORP·Filed 1985·Granted May 5, 1987·39 cites·8 claims
- 0660US4349584AProcess for tapering openings in ternary glass coatingsRCA CORP·Filed 1981·Granted Sep 14, 1982·22 cites·8 claims
- 0757US4716451ASemiconductor device with internal gettering regionRCA CORP·Filed 1982·Granted Dec 29, 1987·19 cites·7 claims
- 0852US4637836AProfile control of boron implantRCA CORP·Filed 1985·Granted Jan 20, 1987·18 cites·7 claims
- 0950US4722912AMethod of forming a semiconductor structureRCA CORP·Filed 1986·Granted Feb 2, 1988·17 cites·11 claims
- 1045US4104087AMethod for fabricating MNOS memory circuitsUS AIR FORCE·Filed 1977·Granted Aug 1, 1978·6 cites·1 claims
- 1144US4259779AMethod of making radiation resistant MOS transistorRCA CORP·Filed 1977·Granted Apr 7, 1981·7 cites·8 claims
- 1242US4999691AIntegrated circuit with stacked MOS field effect transistorsGEN ELECTRIC·Filed 1989·Granted Mar 12, 1991·8 cites·6 claims
- 1338US4658495AMethod of forming a semiconductor structureRCA CORP·Filed 1986·Granted Apr 21, 1987·8 cites·16 claims
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