Inventor
LIU QINGMIN
US21 patents
⚠️ This page may combine multiple inventors who share the name “LIU QINGMIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALWAFERS CO LTD
10 patentsUS11145538B2Oct 12, 2021
High resistivity silicon-on-insulator structure and method of manufacture thereof
GLOBALWAFERS CO LTD5 citations71
US11798802B2Oct 24, 2023
Methods for stripping and cleaning semiconductor structures
GLOBALWAFERS CO LTD2 citations68
US12424471B2Sep 23, 2025
Wafer boats for supporting semiconductor wafers in a furnace
GLOBALWAFERS CO LTD0 citations62
US12046495B2Jul 23, 2024
Wafer boats for supporting semiconductor wafers in a furnace
GLOBALWAFERS CO LTD0 citations62
US11239107B2Feb 1, 2022
High resistivity silicon-on-insulator substrate having enhanced charge trapping efficiency
GLOBALWAFERS CO LTD0 citations62
US11183420B2Nov 23, 2021
High resistivity silicon-on-insulator wafer manufacturing method for reducing substrate loss
GLOBALWAFERS CO LTD0 citations62
US10832937B1Nov 10, 2020
High resistivity silicon-on-insulator substrate having enhanced charge trapping efficiency
GLOBALWAFERS CO LTD0 citations52
US10741437B2Aug 11, 2020
High resistivity silicon-on-insulator substrate having enhanced charge trapping efficiency
GLOBALWAFERS CO LTD0 citations52
US10458709B2Oct 29, 2019
Semiconductor wafer support ring for heat treatment
GLOBALWAFERS CO LTD0 citations50
US10796945B2Oct 6, 2020
High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed by He—N2 co-implantation
GLOBALWAFERS CO LTD0 citations48
SUNEDISON SEMICONDUCTOR LTD UEN201334164H
8 patentsUS10468295B2Nov 5, 2019
High resistivity silicon-on-insulator structure and method of manufacture thereof
SUNEDISON SEMICONDUCTOR LTD UEN201334164H7 citations82
US10224233B2Mar 5, 2019
High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed by He-N2 co-implantation
SUNEDISON SEMICONDUCTOR LTD UEN201334164H5 citations80
US10546771B2Jan 28, 2020
High resistivity silicon-on-insulator substrate having enhanced charge trapping efficiency
SUNEDISON SEMICONDUCTOR LTD UEN201334164H1 citations73
US10312134B2Jun 4, 2019
High resistivity silicon-on-insulator wafer manufacturing method for reducing substrate loss
SUNEDISON SEMICONDUCTOR LTD UEN201334164H3 citations72
US10072892B2Sep 11, 2018
Semiconductor wafer support ring for heat treatment
SUNEDISON SEMICONDUCTOR LTD UEN201334164H5 citations71
US10403541B2Sep 3, 2019
High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed by He—N2 co-implantation
SUNEDISON SEMICONDUCTOR LTD UEN201334164H3 citations69
US10483379B2Nov 19, 2019
High resistivity silicon-on-insulator wafer manufacturing method for reducing substrate loss
SUNEDISON SEMICONDUCTOR LTD UEN201334164H1 citations62
US9899499B2Feb 20, 2018
High resistivity silicon-on-insulator wafer manufacturing method for reducing substrate loss
SUNEDISON SEMICONDUCTOR LTD UEN201334164H1 citations52