Inventor

JEONG HEEDON

KR8 patents

⚠️ This page may combine multiple inventors who share the name “JEONG HEEDON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

7 patents

US10128243B2Nov 13, 2018

Semiconductor device with fin field effect transistors having different separation regions between fins in NMOS and PMOS regions

SAMSUNG ELECTRONICS CO LTD32 citations91

US9117910B2Aug 25, 2015

Fin field effect transistors including multiple lattice constants and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations50

KANG MYUNG GIL

1 patent

US8941155B2Jan 27, 2015

Fin field effect transistors including multiple lattice constants and methods of fabricating the same

KANG MYUNG GIL14 citations78

JEONG HEEDON

SAMSUNG ELECTRONICS CO LTD

Semiconductor device with fin field effect transistors having different separation regions between fins in NMOS and PMOS regions

Semiconductor device and fabricating method thereof

Method of fabricating semiconductor device including an etch barrier pattern

Semiconductor device

Semiconductor device with fin field effect transistors

Semiconductor device including a three-dimensional channel

Fin field effect transistors including multiple lattice constants and methods of fabricating the same

KANG MYUNG GIL

Fin field effect transistors including multiple lattice constants and methods of fabricating the same