Inventor
AMATO JOHN E
US12 patents
Patents
12 patentsUS6657254B2Dec 2, 2003
Trench MOSFET device with improved on-resistance
GEN SEMICONDUCTOR INC86 citations98
US6822288B2Nov 23, 2004
Trench MOSFET device with polycrystalline silicon source contact structure
GEN SEMICONDUCTOR INC32 citations92
US6657255B2Dec 2, 2003
Trench DMOS device with improved drain contact
GEN SEMICONDUCTOR INC19 citations92
US5882986AMar 16, 1999
Semiconductor chips having a mesa structure provided by sawing
GEN SEMICONDUCTOR INC48 citations90
US6645815B2Nov 11, 2003
Method for forming trench MOSFET device with low parasitic resistance
GEN SEMICONDUCTOR INC15 citations83
US6630402B2Oct 7, 2003
Integrated circuit resistant to the formation of cracks in a passivation layer
GEN SEMICONDUCTOR INC10 citations74
US6977203B2Dec 20, 2005
Method of forming narrow trenches in semiconductor substrates
GEN SEMICONDUCTOR INC10 citations73
US7094640B2Aug 22, 2006
Method of making a trench MOSFET device with improved on-resistance
GEN SEMICONDUCTOR INC5 citations63
US7015125B2Mar 21, 2006
Trench MOSFET device with polycrystalline silicon source contact structure
GEN SEMICONDUCTOR INC2 citations63
US6558984B2May 6, 2003
Trench schottky barrier rectifier and method of making the same
GEN SEMICONDUCTOR INC5 citations63
US6420768B1Jul 16, 2002
Trench schottky barrier rectifier and method of making the same
GEN SEMICONDUCTOR INC2 citations63
US7049194B2May 23, 2006
Trench DMOS device with improved drain contact
GEN SEMICONDUCTOR INC4 citations62