P

Inventor

SHINAGAWA TATSUYUKI

JP12 patents
⚠️ This page may combine multiple inventors who share the name “SHINAGAWA TATSUYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FURUKAWA ELECTRIC CO LTD

7 patents
US6700914B2Mar 2, 2004

Vertical cavity surface emitting laser device

FURUKAWA ELECTRIC CO LTD31 citations89
US6914925B2Jul 5, 2005

Vertical cavity surface emitting semiconductor laser device

FURUKAWA ELECTRIC CO LTD16 citations83
US6839369B2Jan 4, 2005

Surface emitting semiconductor laser device

FURUKAWA ELECTRIC CO LTD13 citations83
US9653589B2May 16, 2017

Semiconductor multi-layer substrate, semiconductor device, and method for manufacturing the same

FURUKAWA ELECTRIC CO LTD8 citations81
US7215693B2May 8, 2007

Surface emitting semiconductor laser device

FURUKAWA ELECTRIC CO LTD2 citations62
US6636543B2Oct 21, 2003

Semiconductor device and surface emitting semiconductor laser device

FURUKAWA ELECTRIC CO LTD2 citations62
US6829274B2Dec 7, 2004

Surface emitting semiconductor laser device

FURUKAWA ELECTRIC CO LTD3 citations60

SHINAGAWA TATSUYUKI

2 patents
US8222658B2Jul 17, 2012

Semiconductor light emitting element and method of manufacturing therefor

SHINAGAWA TATSUYUKI9 citations81
US8222639B2Jul 17, 2012

Nitride based semiconductor device and method of manufacturing the same

SHINAGAWA TATSUYUKI1 citations49

FUJI ELECTRIC CO LTD

1 patent
US9276066B2Mar 1, 2016

Semiconductor multi-layer substrate and semiconductor element

FUJI ELECTRIC CO LTD9 citations81

NIIYAMA YUKI

1 patent
US8093626B2Jan 10, 2012

Normally-off field effect transistor using III-nitride semiconductor and method for manufacturing such transistor

NIIYAMA YUKI10 citations80

ADVANCED POWER DEVICE RES ASS

1 patent
US8884393B2Nov 11, 2014

Nitride compound semiconductor device and manufacturing method thereof

ADVANCED POWER DEVICE RES ASS2 citations57