Inventor
LEVY MARK DAVID
US6 patents
Patents
6 patentsUS11049932B2Jun 29, 2021
Semiconductor isolation structures comprising shallow trench and deep trench isolation
GLOBALFOUNDRIES US INC2 citations71
US11923446B2Mar 5, 2024
High electron mobility transistor devices having a silicided polysilicon layer
GLOBALFOUNDRIES US INC1 citations70
US11842940B2Dec 12, 2023
Semiconductor structure having a thermal shunt below a metallization layer and integration schemes
GLOBALFOUNDRIES US INC0 citations60
US11569170B2Jan 31, 2023
Substrate with a buried conductor under an active region for enhanced thermal conductivity and RF shielding
GLOBALFOUNDRIES US INC0 citations60
US12389622B2Aug 12, 2025
High electron mobility transistor devices having a silicided polysilicon layer
GLOBALFOUNDRIES US INC0 citations59
US12243935B2Mar 4, 2025
High electron mobility transistor devices having a silicided polysilicon layer
GLOBALFOUNDRIES US INC0 citations59