Inventor
CHANG SUN-JAY
TW33 patents
⚠️ This page may combine multiple inventors who share the name “CHANG SUN-JAY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
15 patentsUS9679992B2Jun 13, 2017
FinFET device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9166067B2Oct 20, 2015
Device layout for reference and sensor circuits
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US9570587B2Feb 14, 2017
Dislocation stress memorization technique for FinFET device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations69
US9865592B2Jan 9, 2018
Method for FinFET integrated with capacitor
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9450044B2Sep 20, 2016
Guard ring structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US9419087B2Aug 16, 2016
Bipolar junction transistor formed on fin structures
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US12471326B2Nov 11, 2025
Guard ring and circuit device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11450735B2Sep 20, 2022
Method of forming guard ring and circuit device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10269986B2Apr 23, 2019
Rotated STI diode on FinFET technology
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11532730B2Dec 20, 2022
Method of forming a FinFET device by implantation through capping layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US10868112B2Dec 15, 2020
Circuit device including guard ring and method of forming guard ring
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10128329B2Nov 13, 2018
Method of forming guard ring structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9780003B2Oct 3, 2017
Bipolar junction transistor formed on fin structures
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US9755075B2Sep 5, 2017
High efficiency FinFET diode
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10727319B2Jul 28, 2020
Dislocation SMT for FinFET device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48
TAIWAN SEMICONDUCTOR MFG
14 patentsUS9076869B1Jul 7, 2015
FinFET device and method
TAIWAN SEMICONDUCTOR MFG20 citations92
US7279430B2Oct 9, 2007
Process for fabricating a strained channel MOSFET device
TAIWAN SEMICONDUCTOR MFG23 citations92
US6885214B1Apr 26, 2005
Method for measuring capacitance-voltage curves for transistors
TAIWAN SEMICONDUCTOR MFG24 citations91
US7220630B2May 22, 2007
Method for selectively forming strained etch stop layers to improve FET charge carrier mobility
TAIWAN SEMICONDUCTOR MFG40 citations89
US9318621B2Apr 19, 2016
Rotated STI diode on FinFET technology
TAIWAN SEMICONDUCTOR MFG7 citations84
US9305918B2Apr 5, 2016
Method for FinFET integrated with capacitor
TAIWAN SEMICONDUCTOR MFG6 citations84
US8946038B2Feb 3, 2015
Diode structures using fin field effect transistor processing and method of forming the same
TAIWAN SEMICONDUCTOR MFG14 citations84
US7078723B2Jul 18, 2006
Microelectronic device with depth adjustable sill
TAIWAN SEMICONDUCTOR MFG17 citations84
US9093566B2Jul 28, 2015
High efficiency FinFET diode
TAIWAN SEMICONDUCTOR MFG5 citations83
US7897501B2Mar 1, 2011
Method of fabricating a field-effect transistor having robust sidewall spacers
TAIWAN SEMICONDUCTOR MFG9 citations83
US7898028B2Mar 1, 2011
Process for fabricating a strained channel MOSFET device
TAIWAN SEMICONDUCTOR MFG6 citations74
US7190033B2Mar 13, 2007
CMOS device and method of manufacture
TAIWAN SEMICONDUCTOR MFG7 citations73
US9293378B2Mar 22, 2016
High efficiency FinFET diode
TAIWAN SEMICONDUCTOR MFG1 citations62
US9281399B2Mar 8, 2016
FinFET with high breakdown voltage characteristics
TAIWAN SEMICONDUCTOR MFG0 citations52