Inventor
SONG MING-HSIANG
TW59 patents
⚠️ This page may combine multiple inventors who share the name “SONG MING-HSIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
28 patentsUS9172242B2Oct 27, 2015
Electrostatic discharge protection for three dimensional integrated circuit
TAIWAN SEMICONDUCTOR MFG CO LTD24 citations92
US10325906B2Jun 18, 2019
ESD testing structure, method of using same and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10283210B2May 7, 2019
Memory device with a fuse protection circuit
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10109366B2Oct 23, 2018
Memory device with a fuse protection circuit
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9882002B2Jan 30, 2018
FinFET with an asymmetric source/drain structure and method of making same
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US11264374B2Mar 1, 2022
Method of forming electrostatic discharge (ESD) testing structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10803967B2Oct 13, 2020
Memory device with a fuse protection circuit
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10756082B2Aug 25, 2020
Method of forming electrostatic discharge (ESD) testing structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10643726B2May 5, 2020
Memory device with a fuse protection circuit
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10096589B2Oct 9, 2018
Fin ESD protection diode and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9979186B2May 22, 2018
Electrostatic discharge protection for three dimensional integrated circuit
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9812436B2Nov 7, 2017
SCRs with checker board layouts
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9576945B2Feb 21, 2017
Methods and apparatus for increased holding voltage in silicon controlled rectifiers for ESD protection
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9443840B2Sep 13, 2016
Methods and apparatus for ESD structures
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations72
US9831235B2Nov 28, 2017
Method of making structure having a gate stack
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US11935885B2Mar 19, 2024
Device including integrated electrostatic discharge protection component
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11562996B2Jan 24, 2023
Device including integrated electrostatic discharge protection component
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11557586B2Jan 17, 2023
Device including integrated electrostatic discharge protection component
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10991442B2Apr 27, 2021
Memory device with a fuse protection circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10269986B2Apr 23, 2019
Rotated STI diode on FinFET technology
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10790274B2Sep 29, 2020
SCRs with checker board layouts
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10741543B2Aug 11, 2020
Device including integrated electrostatic discharge protection component
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9978739B2May 22, 2018
Semiconductor arrangement facilitating enhanced thermo-conduction
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9842833B2Dec 12, 2017
Electrostatic discharge protection
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9666575B2May 30, 2017
Semiconductor arrangement facilitating enhanced thermo-conduction
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9647452B2May 9, 2017
Electrostatic discharge protection for level-shifter circuit
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US9466978B2Oct 11, 2016
Electrostatic discharge protection for level-shifter circuit
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US9443850B2Sep 13, 2016
Epitaxial growth between gates
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
TAIWAN SEMICONDUCTOR MFG
10 patentsUS7411767B2Aug 12, 2008
Multi-domain ESD protection circuit structure
TAIWAN SEMICONDUCTOR MFG42 citations91
US9318621B2Apr 19, 2016
Rotated STI diode on FinFET technology
TAIWAN SEMICONDUCTOR MFG7 citations84
US9231106B2Jan 5, 2016
FinFET with an asymmetric source/drain structure and method of making same
TAIWAN SEMICONDUCTOR MFG7 citations84
US9147676B2Sep 29, 2015
SCRs with checker board layouts
TAIWAN SEMICONDUCTOR MFG5 citations84
US9117669B2Aug 25, 2015
Apparatus for ESD protection
TAIWAN SEMICONDUCTOR MFG13 citations84
US8049250B2Nov 1, 2011
Circuit and method for power clamp triggered dual SCR ESD protection
TAIWAN SEMICONDUCTOR MFG14 citations84
US7420250B2Sep 2, 2008
Electrostatic discharge protection device having light doped regions
TAIWAN SEMICONDUCTOR MFG14 citations84
US7323752B2Jan 29, 2008
ESD protection circuit with floating diffusion regions
TAIWAN SEMICONDUCTOR MFG16 citations83
US9397217B2Jul 19, 2016
Contact structure of non-planar semiconductor device
TAIWAN SEMICONDUCTOR MFG5 citations73
US7062740B2Jun 13, 2006
System and method for reducing design cycle time for designing input/output cells
TAIWAN SEMICONDUCTOR MFG3 citations62
SONG MING-HSIANG
3 patentsUS8079528B2Dec 20, 2011
Input/output pads placement for a smart card chip
SONG MING-HSIANG24 citations92
US8759871B2Jun 24, 2014
Bidirectional dual-SCR circuit for ESD protection
SONG MING-HSIANG31 citations91
US8405943B2Mar 26, 2013
Circuit and method for power clamp triggered dual SCR ESD protection
SONG MING-HSIANG5 citations72
LEE JAM-WEM
2 patentsTAIWAN SEMICONDUCTOR MANFACTURING COMPANY LTD
1 patentTSAI MING-HSIEN
1 patentCHEN KUO-JI
1 patentTSENG JEN-CHOU
1 patentLIN CHUN-YU
1 patentCHIH YUE-DER
1 patentSU YU-TI
1 patentShowing the top 50 of 59 patents by PatentIndex Score.