Inventor
MIN YUANYUAN
CN15 patents
Patents
15 patentsUS11710529B2Jul 25, 2023
Three-dimensional memory device programming with reduced disturbance
YANGTZE MEMORY TECH CO LTD2 citations72
US12176043B2Dec 24, 2024
Three-dimensional memory device programming with reduced disturbance
YANGTZE MEMORY TECH CO LTD0 citations62
US11423995B2Aug 23, 2022
Three-dimensional memory device programming with reduced disturbance
YANGTZE MEMORY TECH CO LTD0 citations62
US12499949B2Dec 16, 2025
Memory devices and operating methods thereof, memory systems
YANGTZE MEMORY TECH CO LTD0 citations61
US12537067B2Jan 27, 2026
Method of operating memory, memory, and memory system
YANGTZE MEMORY TECH CO LTD0 citations59
US12299332B2May 13, 2025
Memory devices, operation method thereof and memory system
YANGTZE MEMORY TECH CO LTD0 citations58
US12230342B2Feb 18, 2025
Memory device, memory system, and read operation method thereof
YANGTZE MEMORY TECH CO LTD0 citations52
US12561061B2Feb 24, 2026
Three-dimensional NAND memory device and system and method for performing read operations thereof
YANGTZE MEMORY TECH CO LTD0 citations51
US12354668B2Jul 8, 2025
Programming method for semiconductor device and semiconductor device
YANGTZE MEMORY TECH CO LTD0 citations51
US12260096B2Mar 25, 2025
Method of reducing Vpass disturb in 3D nand systems
YANGTZE MEMORY TECH CO LTD0 citations51
US11670373B2Jun 6, 2023
Three-dimensional memory device programming with reduced threshold voltage shift
YANGTZE MEMORY TECH CO LTD0 citations51
US12300323B2May 13, 2025
Method of improving program operation speed in 3D NAND systems
YANGTZE MEMORY TECH CO LTD0 citations49
US11864379B2Jan 2, 2024
Three-dimensional memory and control method thereof
YANGTZE MEMORY TECH CO LTD0 citations49
US12554409B2Feb 17, 2026
Memory device, memory sytem, and operation method thereof for applying read voltages to word line
YANGTZE MEMORY TECH CO LTD0 citations48
US12170114B2Dec 17, 2024
Three-dimensional memory device and method for reading the same
YANGTZE MEMORY TECH CO LTD0 citations48