Inventor

HU CHAO-KUN

US41 patents

⚠️ This page may combine multiple inventors who share the name “HU CHAO-KUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HU CHAO-KUN

IBM

Copper interconnection structure incorporating a metal seed layer

Structures of and methods and tools for forming in-situ metallic/dielectric caps for interconnects

Copper interconnection structure incorporating a metal seed layer

Reduced electromigration and stressed induced migration of Cu wires by surface coating

Copper alloys for chip and package interconnections

Copper recess process with application to selective capping and electroless plating

Method of making electroplated interconnection structures on integrated circuit chips

Chip to wiring interface with single metal alloy layer applied to surface of copper interconnect

Method of making copper alloys for chip and package interconnections

Planarization of Josephson integrated circuit

Nitrogen-containing metal cap for interconnect structures

Interconnect structure for integrated circuits having improved electromigration characteristics

Increasing electromigration lifetime and current density in IC using vertically upwardly extending dummy via

Copper recess process with application to selective capping and electroless plating

On-chip Cu interconnection using 1 to 5 nm thick metal cap

Aluminum-based metallization exhibiting reduced electromigration and method therefor

Method for forming an open-bottom liner for a conductor in an electronic structure and device formed

Electromigration test structure for Cu barrier integrity and blech effect evaluations

Efficient interconnect structure for electrical fuse applications

Structure and method of forming electrically blown metal fuses for integrated circuits

Reduced electromigration and stressed induced migration of copper wires by surface coating

Increasing electromigration lifetime and current density in IC using vertically upwardly extending dummy via

Copper interconnect with CVD liner and metallic cap

Electroplated interconnection structures on integrated circuit chips

Low-temperature diffusion doping of copper interconnects independent of seed layer composition

Low-temperature diffusion doping of copper interconnects independent of seed layer composition

Techniques to improve reliability in Cu interconnects using Cu intermetallics

Interconnects with Ti-containing liners

Interconnect structures comprising capping layers with low dielectric constants and methods of making the same

Electrode with alloy interface

Techniques to improve reliability in Cu interconnects using Cu intermetallics

Low-temperature diffusion doping of copper interconnects independent of seed layer composition

Techniques to improve reliability in Cu interconnects using Cu intermetallics

Electromigration test structure for Cu barrier integrity and blech effect evaluations

YANG CHIH-CHAO

Interconnect structure having a via with a via gouging feature and dielectric liner sidewalls for BEOL integration

Metallic capped interconnect structure with high electromigration resistance and low resistivity

Efficient interconnect structure for electrical fuse applications

Discontinuous/non-uniform metal cap structure and process for interconnect integration

Discontinuous/non-uniform metal cap structure and process for interconnect integration

BONILLA GRISELDA

Interconnect structure for integrated circuits having enhanced electromigration resistance

BAUMANN FRIEDER HAINRICH

Copper interconnect with CVD liner and metallic cap