Inventor
KAJIKAWA YASUTOMO
JP9 patents
Patents
9 patentsUS4789643ADec 6, 1988
Method of manufacturing a heterojunction bipolar transistor involving etch and refill
MITSUBISHI ELECTRIC CORP90 citations94
US5835516ANov 10, 1998
Semiconductor laser device and method of fabricating semiconductor laser device
MITSUBISHI ELECTRIC CORP24 citations92
US5714006AFeb 3, 1998
Method of growing compound semiconductor layer
MITSUBISHI ELECTRIC CORP36 citations92
US6506618B1Jan 14, 2003
Method of forming a GaInNAs layer
MITSUBISHI ELECTRIC CORP7 citations73
US4896203AJan 23, 1990
Heterojunction bipolar transistor
MITSUBISHI ELECTRIC CORP10 citations72
US4824805AApr 25, 1989
Method of manufacturing semiconductor device
MITSUBISHI ELECTRIC CORP10 citations72
US5673283ASep 30, 1997
Semiconductor device and fabricating method thereof
MITSUBISHI ELECTRIC CORP5 citations62
US5841156ANov 24, 1998
Semiconductor device including T1 GaAs layer
MITSUBISHI ELECTRIC CORP6 citations61
US6275515B1Aug 14, 2001
Semiconductor laser device and method of producing the same
MITSUBISHI ELECTRIC CORP1 citations51