Inventor
STRACHAN ANDY
US27 patents
⚠️ This page may combine multiple inventors who share the name “STRACHAN ANDY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NAT SEMICONDUCTOR CORP
26 patentsUS6566710B1May 20, 2003
Power MOSFET cell with a crossed bar shaped body contact area
NAT SEMICONDUCTOR CORP68 citations95
US6806529B1Oct 19, 2004
Memory cell with a capacitive structure as a control gate and method of forming the memory cell
NAT SEMICONDUCTOR CORP29 citations92
US6586317B1Jul 1, 2003
Method of forming a zener diode in a npn and pnp bipolar process flow that requires no additional steps to set the breakdown voltage
NAT SEMICONDUCTOR CORP48 citations91
US6815797B1Nov 9, 2004
Silicide bridged anti-fuse
NAT SEMICONDUCTOR CORP21 citations90
US7105373B1Sep 12, 2006
Vertical photodiode with heavily-doped regions of alternating conductivity types
NAT SEMICONDUCTOR CORP15 citations84
US6559507B1May 6, 2003
Compact ballasting region design for snapback N-MOS ESD protection structure using multiple local N+ region blocking
NAT SEMICONDUCTOR CORP13 citations84
US6727547B1Apr 27, 2004
Method and device for improving hot carrier reliability of an LDMOS transistor using drain ring over-drive bias
NAT SEMICONDUCTOR CORP15 citations83
US6946706B1Sep 20, 2005
LDMOS transistor structure for improving hot carrier reliability
NAT SEMICONDUCTOR CORP19 citations82
US7507607B1Mar 24, 2009
Method of forming a silicide bridged anti-fuse with a tungsten plug metalization process
NAT SEMICONDUCTOR CORP10 citations81
US7298159B1Nov 20, 2007
Method of measuring the leakage current of a deep trench isolation structure
NAT SEMICONDUCTOR CORP15 citations80
US7192857B1Mar 20, 2007
Method of forming a semiconductor structure with non-uniform metal widths
NAT SEMICONDUCTOR CORP8 citations74
US6933562B1Aug 23, 2005
Power transistor structure with non-uniform metal widths
NAT SEMICONDUCTOR CORP7 citations74
US6919588B1Jul 19, 2005
High-voltage silicon controlled rectifier structure with improved punch through resistance
NAT SEMICONDUCTOR CORP9 citations74
US6844585B1Jan 18, 2005
Circuit and method of forming the circuit having subsurface conductors
NAT SEMICONDUCTOR CORP6 citations74
US7214992B1May 8, 2007
Multi-source, multi-gate MOS transistor with a drain region that is wider than the source regions
NAT SEMICONDUCTOR CORP9 citations73
US6979879B1Dec 27, 2005
Trim zener using double poly process
NAT SEMICONDUCTOR CORP8 citations73
US7714355B1May 11, 2010
Method of controlling the breakdown voltage of BSCRs and BJT clamps
NAT SEMICONDUCTOR CORP2 citations63
US7238553B1Jul 3, 2007
Method of forming a high-voltage silicon controlled rectifier structure with improved punch through resistance
NAT SEMICONDUCTOR CORP3 citations63
US7037814B1May 2, 2006
Single mask control of doping levels
NAT SEMICONDUCTOR CORP2 citations63
US6864582B1Mar 8, 2005
Semiconductor interconnect and method of providing interconnect using a contact region
NAT SEMICONDUCTOR CORP2 citations63
US7488647B1Feb 10, 2009
System and method for providing a poly cap and a no field oxide area to prevent formation of a vertical bird's beak structure in the manufacture of a semiconductor device
NAT SEMICONDUCTOR CORP2 citations62
US7960998B2Jun 14, 2011
Electrical test structure and method for characterization of deep trench sidewall reliability
NAT SEMICONDUCTOR CORP5 citations59
US7479435B1Jan 20, 2009
Method of forming a circuit having subsurface conductors
NAT SEMICONDUCTOR CORP0 citations52
US7989883B1Aug 2, 2011
System and method for providing a poly cap and a no field oxide area to prevent formation of a vertical bird's beak structure in the manufacture of a semiconductor device
NAT SEMICONDUCTOR CORP0 citations51
US6639784B1Oct 28, 2003
Wedge-shaped high density capacitor and method of making the capacitor
NAT SEMICONDUCTOR CORP0 citations51
US7867871B1Jan 11, 2011
System and method for increasing breakdown voltage of LOCOS isolated devices
NAT SEMICONDUCTOR CORP0 citations47