Inventor

WILK GLEN D

US31 patents

⚠️ This page may combine multiple inventors who share the name “WILK GLEN D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WILK GLEN D

TEXAS INSTRUMENTS INC

Zirconium and/or hafnium oxynitride gate dielectric

Method of forming dual metal gate structures or CMOS devices

Zirconium and/or hafnium silicon-oxynitride gate dielectric

Zirconium and/or hafnium silicon-oxynitride gate dielectric

Zirconium and/or hafnium oxynitride gate dielectric

Chemical vapor deposition of silicate high dielectric constant materials

Use of crystalline SiOx barriers for Si-based resonant tunneling diodes

Method of growing crystalline silicon overlayers on thin amorphous silicon oxide layers and forming by method a resonant tunneling diode

High permittivity silicate gate dielectric

Hafnium nitride gate dielectric

Method to form silicates as high dielectric constant materials

Hafnium nitride gate dielectric

Method for thin film deposition on single-crystal semiconductor substrates

Low temperature method for forming a thin, uniform layer of aluminum oxide

Method for thin film deposition on single-crystal semiconductor substrates

Process to produce ultrathin crystalline silicon nitride on Si(111) for advanced gate dielectrics

Method of growing high-quality crystalline silicon quantum wells for RTD structures

High permittivity silicate gate dielectric

Ultrascaled MIS transistors fabricated using silicon-on-lattice-matched insulator approach

Apparatus and method for evaluating semiconductor structures and devices

Process to produce ultrathin crystalline silicon nitride on Si (111) for advanced gate dielectrics

Lower temperature method for forming high quality silicon-nitrogen dielectrics

Method for growing high-quality crystalline Si quantum wells for RTD structures

Low temperature method for forming a thin, uniform oxide

Chemical vapor deposition of silicate high dielectric constant materials

Method of forming metal oxide gate structures and capacitor electrodes

Lower temperature method for forming high quality silicon-nitrogen dielectrics

High charge storage density integrated circuit capacitor

Method to form silicates as high dielectric constant materials

Lower temperature method for forming high quality silicon-nitrogen dielectrics

AGERE SYSTEMS INC

Fabrication process for a semiconductor device having a metal oxide dielectric material with a high dielectric constant, annealed with a buffered anneal process