Inventor
YAMAMOTO YOSHITSUGU
JP28 patents
⚠️ This page may combine multiple inventors who share the name “YAMAMOTO YOSHITSUGU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
24 patentsUS5796127AAug 18, 1998
High electron mobility transistor
MITSUBISHI ELECTRIC CORP224 citations99
US5616181AApr 1, 1997
MBE apparatus and gas branch piping apparatus
MITSUBISHI ELECTRIC CORP89 citations95
US6043520AMar 28, 2000
III-V heterojunction bipolar transistor having a GaAs emitter ballast
MITSUBISHI ELECTRIC CORP46 citations92
US5811843ASep 22, 1998
Field effect transistor
MITSUBISHI ELECTRIC CORP28 citations92
US5729030AMar 17, 1998
Semiconductor device
MITSUBISHI ELECTRIC CORP19 citations92
US5677553AOct 14, 1997
Semiconductor device strucutre having a two-dimensional electron gas and contact thereto
MITSUBISHI ELECTRIC CORP39 citations92
US7420684B2Sep 2, 2008
Method and apparatus for measuring surface carrier recombination velocity and surface Fermi level
MITSUBISHI ELECTRIC CORP8 citations74
US6037242AMar 14, 2000
Method of making hetero-structure
MITSUBISHI ELECTRIC CORP7 citations74
US5682045AOct 28, 1997
Method of fabricating semiconductor device and semiconductor device fabricated thereby
MITSUBISHI ELECTRIC CORP8 citations74
US10854523B2Dec 1, 2020
Semiconductor device
MITSUBISHI ELECTRIC CORP2 citations72
US7038768B2May 2, 2006
Optical measuring method for semiconductor multiple layer structures and apparatus therefor
MITSUBISHI ELECTRIC CORP3 citations63
US5874753AFeb 23, 1999
Field effect transistor
MITSUBISHI ELECTRIC CORP5 citations63
US6911837B2Jun 28, 2005
Method and apparatus for evaluating and adjusting microwave integrated circuit
MITSUBISHI ELECTRIC CORP3 citations62
US8816493B2Aug 26, 2014
Semiconductor device
MITSUBISHI ELECTRIC CORP2 citations61
US7612633B2Nov 3, 2009
High-frequency switch
MITSUBISHI ELECTRIC CORP4 citations61
US7528443B2May 5, 2009
Semiconductor device with recessed gate and shield electrode
MITSUBISHI ELECTRIC CORP5 citations61
US9159654B2Oct 13, 2015
Semiconductor device
MITSUBISHI ELECTRIC CORP2 citations59
US7700972B2Apr 20, 2010
Semiconductor device
MITSUBISHI ELECTRIC CORP0 citations52
US7656514B2Feb 2, 2010
Method and apparatus for evaluating semiconductor layers
MITSUBISHI ELECTRIC CORP0 citations52
US6998615B2Feb 14, 2006
Method for evaluating piezoelectric fields
MITSUBISHI ELECTRIC CORP0 citations52
US6819119B2Nov 16, 2004
Method for evaluating a crystalline semiconductor substrate
MITSUBISHI ELECTRIC CORP1 citations52
US9508564B2Nov 29, 2016
Method for manufacturing semiconductor device
MITSUBISHI ELECTRIC CORP0 citations51
US8912099B2Dec 16, 2014
Method of manufacturing semiconductor device
MITSUBISHI ELECTRIC CORP0 citations49
US9117742B2Aug 25, 2015
High electron mobility transistor with shortened recovery time
MITSUBISHI ELECTRIC CORP0 citations41