P

Inventor

YAMAMOTO YOSHITSUGU

JP28 patents
⚠️ This page may combine multiple inventors who share the name “YAMAMOTO YOSHITSUGU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

24 patents
US5796127AAug 18, 1998

High electron mobility transistor

MITSUBISHI ELECTRIC CORP224 citations99
US5616181AApr 1, 1997

MBE apparatus and gas branch piping apparatus

MITSUBISHI ELECTRIC CORP89 citations95
US6043520AMar 28, 2000

III-V heterojunction bipolar transistor having a GaAs emitter ballast

MITSUBISHI ELECTRIC CORP46 citations92
US5811843ASep 22, 1998

Field effect transistor

MITSUBISHI ELECTRIC CORP28 citations92
US5729030AMar 17, 1998

Semiconductor device

MITSUBISHI ELECTRIC CORP19 citations92
US5677553AOct 14, 1997

Semiconductor device strucutre having a two-dimensional electron gas and contact thereto

MITSUBISHI ELECTRIC CORP39 citations92
US7420684B2Sep 2, 2008

Method and apparatus for measuring surface carrier recombination velocity and surface Fermi level

MITSUBISHI ELECTRIC CORP8 citations74
US6037242AMar 14, 2000

Method of making hetero-structure

MITSUBISHI ELECTRIC CORP7 citations74
US5682045AOct 28, 1997

Method of fabricating semiconductor device and semiconductor device fabricated thereby

MITSUBISHI ELECTRIC CORP8 citations74
US10854523B2Dec 1, 2020

Semiconductor device

MITSUBISHI ELECTRIC CORP2 citations72
US7038768B2May 2, 2006

Optical measuring method for semiconductor multiple layer structures and apparatus therefor

MITSUBISHI ELECTRIC CORP3 citations63
US5874753AFeb 23, 1999

Field effect transistor

MITSUBISHI ELECTRIC CORP5 citations63
US6911837B2Jun 28, 2005

Method and apparatus for evaluating and adjusting microwave integrated circuit

MITSUBISHI ELECTRIC CORP3 citations62
US8816493B2Aug 26, 2014

Semiconductor device

MITSUBISHI ELECTRIC CORP2 citations61
US7612633B2Nov 3, 2009

High-frequency switch

MITSUBISHI ELECTRIC CORP4 citations61
US7528443B2May 5, 2009

Semiconductor device with recessed gate and shield electrode

MITSUBISHI ELECTRIC CORP5 citations61
US9159654B2Oct 13, 2015

Semiconductor device

MITSUBISHI ELECTRIC CORP2 citations59
US7700972B2Apr 20, 2010

Semiconductor device

MITSUBISHI ELECTRIC CORP0 citations52
US7656514B2Feb 2, 2010

Method and apparatus for evaluating semiconductor layers

MITSUBISHI ELECTRIC CORP0 citations52
US6998615B2Feb 14, 2006

Method for evaluating piezoelectric fields

MITSUBISHI ELECTRIC CORP0 citations52
US6819119B2Nov 16, 2004

Method for evaluating a crystalline semiconductor substrate

MITSUBISHI ELECTRIC CORP1 citations52
US9508564B2Nov 29, 2016

Method for manufacturing semiconductor device

MITSUBISHI ELECTRIC CORP0 citations51
US8912099B2Dec 16, 2014

Method of manufacturing semiconductor device

MITSUBISHI ELECTRIC CORP0 citations49
US9117742B2Aug 25, 2015

High electron mobility transistor with shortened recovery time

MITSUBISHI ELECTRIC CORP0 citations41

RIGAKU DENKI CO LTD

1 patent

OISHI TOSHIYUKI

1 patent

KUNII TETSUO

1 patent

NOGAMI YOUICHI

1 patent