P

Inventor

ZHANG JOHN H

US167 patents
⚠️ This page may combine multiple inventors who share the name “ZHANG JOHN H”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ST MICROELECTRONICS INC

27 patents
US9385195B1Jul 5, 2016

Vertical gate-all-around TFET

ST MICROELECTRONICS INC93 citations99
US10629538B2Apr 21, 2020

Modular interconnects for gate-all-around transistors

ST MICROELECTRONICS INC16 citations94
US9653585B2May 16, 2017

Vertical gate-all-around TFET

ST MICROELECTRONICS INC22 citations94
US9466452B1Oct 11, 2016

Integrated cantilever switch

ST MICROELECTRONICS INC26 citations94
US9853163B2Dec 26, 2017

Gate all around vacuum channel transistor

ST MICROELECTRONICS INC14 citations93
US9305997B1Apr 5, 2016

Method for making semiconductor device with stacked analog components in back end of line (BEOL) regions

ST MICROELECTRONICS INC10 citations93
US10680112B2Jun 9, 2020

Gate all around vacuum channel transistor

ST MICROELECTRONICS INC4 citations84
US10325927B2Jun 18, 2019

Integrated circuit devices and fabrication techniques

ST MICROELECTRONICS INC3 citations84
US10199505B2Feb 5, 2019

Transistors incorporating metal quantum dots into doped source and drain regions

ST MICROELECTRONICS INC6 citations84
US10128327B2Nov 13, 2018

DRAM interconnect structure having ferroelectric capacitors exhibiting negative capacitance

ST MICROELECTRONICS INC12 citations84
US10103245B2Oct 16, 2018

Embedded shape sige for strained channel transistors

ST MICROELECTRONICS INC6 citations84
US9997463B2Jun 12, 2018

Modular interconnects for gate-all-around transistors

ST MICROELECTRONICS INC9 citations84
US9953983B2Apr 24, 2018

Vertical gate-all-around TFET

ST MICROELECTRONICS INC4 citations84
US9825055B2Nov 21, 2017

FinFETs suitable for use in a high density SRAM cell

ST MICROELECTRONICS INC7 citations84
US9799776B2Oct 24, 2017

Semi-floating gate FET

ST MICROELECTRONICS INC7 citations84
US9748356B2Aug 29, 2017

Threshold adjustment for quantum dot array devices with metal source and drain

ST MICROELECTRONICS INC8 citations84
US9711649B2Jul 18, 2017

Transistors incorporating metal quantum dots into doped source and drain regions

ST MICROELECTRONICS INC5 citations84
US9601630B2Mar 21, 2017

Transistors incorporating metal quantum dots into doped source and drain regions

ST MICROELECTRONICS INC9 citations84
US9425213B1Aug 23, 2016

Stacked short and long channel FinFETs

ST MICROELECTRONICS INC7 citations84
US9111801B2Aug 18, 2015

Integrated circuit devices and fabrication techniques

ST MICROELECTRONICS INC8 citations84
US9099465B2Aug 4, 2015

High aspect ratio vias for high performance devices

ST MICROELECTRONICS INC9 citations84
US8859350B2Oct 14, 2014

Recessed gate field effect transistor

ST MICROELECTRONICS INC13 citations84
US9337087B1May 10, 2016

Multilayer structure in an integrated circuit for damage prevention and detection and methods of creating the same

ST MICROELECTRONICS INC13 citations83
US9240375B2Jan 19, 2016

Modular fuses and antifuses for integrated circuits

ST MICROELECTRONICS INC7 citations83
US8987780B2Mar 24, 2015

Graphene capped HEMT device

ST MICROELECTRONICS INC8 citations83
US8829670B1Sep 9, 2014

Through silicon via structure for internal chip cooling

ST MICROELECTRONICS INC17 citations83
US9391020B2Jul 12, 2016

Interconnect structure having large self-aligned vias

ST MICROELECTRONICS INC7 citations82

GLOBALFOUNDRIES INC

13 patents
US9640636B1May 2, 2017

Methods of forming replacement gate structures and bottom and top source/drain regions on a vertical transistor device

GLOBALFOUNDRIES INC88 citations98
US9536793B1Jan 3, 2017

Self-aligned gate-first VFETs using a gate spacer recess

GLOBALFOUNDRIES INC74 citations97
US9530863B1Dec 27, 2016

Methods of forming vertical transistor devices with self-aligned replacement gate structures

GLOBALFOUNDRIES INC68 citations97
US9530866B1Dec 27, 2016

Methods of forming vertical transistor devices with self-aligned top source/drain conductive contacts

GLOBALFOUNDRIES INC128 citations97
US10461186B1Oct 29, 2019

Methods of forming vertical field effect transistors with self-aligned contacts and the resulting structures

GLOBALFOUNDRIES INC28 citations94
US10217846B1Feb 26, 2019

Vertical field effect transistor formation with critical dimension control

GLOBALFOUNDRIES INC21 citations94
US9882025B1Jan 30, 2018

Methods of simultaneously forming bottom and top spacers on a vertical transistor device

GLOBALFOUNDRIES INC17 citations94
US9812365B1Nov 7, 2017

Methods of cutting gate structures on transistor devices

GLOBALFOUNDRIES INC26 citations94
US9799751B1Oct 24, 2017

Methods of forming a gate structure on a vertical transistor device

GLOBALFOUNDRIES INC28 citations94
US9607893B1Mar 28, 2017

Method of forming self-aligned metal lines and vias

GLOBALFOUNDRIES INC22 citations94
US10115633B2Oct 30, 2018

Method for producing self-aligned line end vias and related device

GLOBALFOUNDRIES INC5 citations84
US9837553B1Dec 5, 2017

Vertical field effect transistor

GLOBALFOUNDRIES INC8 citations84
US9761491B1Sep 12, 2017

Self-aligned deep contact for vertical FET

GLOBALFOUNDRIES INC16 citations84

IBM

5 patents

ZHANG JOHN H

5 patents

Showing the top 50 of 167 patents by PatentIndex Score.