Inventor
YU XIAOJUN
US62 patents
⚠️ This page may combine multiple inventors who share the name “YU XIAOJUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
10 patentsUS8354309B2Jan 15, 2013
Method of providing threshold voltage adjustment through gate dielectric stack modification
IBM24 citations92
US8993389B2Mar 31, 2015
Dummy gate interconnect for semiconductor device
IBM5 citations73
US9105722B2Aug 11, 2015
Tucked active region without dummy poly for performance boost and variation reduction
IBM1 citations63
US8835234B2Sep 16, 2014
MOS having a sic/sige alloy stack
IBM2 citations63
US7999332B2Aug 16, 2011
Asymmetric semiconductor devices and method of fabricating
IBM5 citations63
US7834387B2Nov 16, 2010
Metal gate compatible flash memory gate stack
IBM4 citations63
US7825479B2Nov 2, 2010
Electrical antifuse having a multi-thickness dielectric layer
IBM4 citations63
US9349609B2May 24, 2016
Semiconductor process temperature optimization
IBM1 citations52
US9082877B2Jul 14, 2015
Complementary metal oxide semiconductor (CMOS) device having gate structures connected by a metal gate conductor
IBM0 citations52
US8779469B2Jul 15, 2014
Post-gate shallow trench isolation structure formation
IBM0 citations52
YU XIAOJUN
9 patentsUS8853035B2Oct 7, 2014
Tucked active region without dummy poly for performance boost and variation reduction
YU XIAOJUN9 citations84
US8754412B2Jun 17, 2014
Intra die variation monitor using through-silicon via
YU XIAOJUN2 citations62
US8582390B2Nov 12, 2013
Wordline voltage transfer apparatus, systems, and methods
YU XIAOJUN1 citations62
US8264886B2Sep 11, 2012
Delayed activation of selected wordlines in memory
YU XIAOJUN2 citations62
US8259508B2Sep 4, 2012
Erase operation control sequencing apparatus, systems, and methods
YU XIAOJUN1 citations62
US8174900B2May 8, 2012
Wordline voltage transfer apparatus, systems, and methods
YU XIAOJUN2 citations62
US9070459B2Jun 30, 2015
Erase operation control sequencing apparatus, systems, and methods
YU XIAOJUN0 citations52
US8785291B2Jul 22, 2014
Post-gate shallow trench isolation structure formation
YU XIAOJUN0 citations52
US8466496B2Jun 18, 2013
Selective partial gate stack for improved device isolation
YU XIAOJUN1 citations52
SHENZHEN ROYOLE TECHNOLOGIES CO LTD
6 patentsUS9590025B2Mar 7, 2017
Tiled OLED display and manufacturing method thereof
SHENZHEN ROYOLE TECHNOLOGIES CO LTD17 citations84
US10163998B2Dec 25, 2018
TFT array substrate structure based on OLED
SHENZHEN ROYOLE TECHNOLOGIES CO LTD5 citations72
US9269796B2Feb 23, 2016
Manufacturing method of a thin film transistor and pixel unit thereof
SHENZHEN ROYOLE TECHNOLOGIES CO LTD2 citations63
US11272621B2Mar 8, 2022
Substrate and method for fabricating flexible electronic device and rigid substrate
SHENZHEN ROYOLE TECHNOLOGIES CO LTD0 citations52
US9583519B2Feb 28, 2017
Manufacturing method of a thin film transistor and pixel unit thereof
SHENZHEN ROYOLE TECHNOLOGIES CO LTD0 citations52
US9564536B2Feb 7, 2017
Self-aligned metal oxide thin-film transistor component and manufacturing method thereof
SHENZHEN ROYOLE TECHNOLOGIES CO LTD1 citations52
CYPRESS SEMICONDUCTOR CORP
4 patentsUS8953380B1Feb 10, 2015
Systems, methods, and apparatus for memory cells with common source lines
CYPRESS SEMICONDUCTOR CORP14 citations92
US9355725B2May 31, 2016
Non-volatile memory and method of operating the same
CYPRESS SEMICONDUCTOR CORP4 citations73
US9466374B2Oct 11, 2016
Systems, methods, and apparatus for memory cells with common source lines
CYPRESS SEMICONDUCTOR CORP3 citations72
US9627073B2Apr 18, 2017
Systems, methods, and apparatus for memory cells with common source lines
CYPRESS SEMICONDUCTOR CORP0 citations52
MICRON TECHNOLOGY INC
3 patentsUS7778086B2Aug 17, 2010
Erase operation control sequencing apparatus, systems, and methods
MICRON TECHNOLOGY INC32 citations93
US7656740B2Feb 2, 2010
Wordline voltage transfer apparatus, systems, and methods
MICRON TECHNOLOGY INC14 citations93
US7649783B2Jan 19, 2010
Delayed activation of selected wordlines in memory
MICRON TECHNOLOGY INC3 citations63
CHIDAMBARRAO DURESETI
3 patentsUS8629022B2Jan 14, 2014
Asymmetric FET including sloped threshold voltage adjusting material layer and method of fabricating same
CHIDAMBARRAO DURESETI18 citations92
US8476706B1Jul 2, 2013
CMOS having a SiC/SiGe alloy stack
CHIDAMBARRAO DURESETI29 citations92
US8445974B2May 21, 2013
Asymmetric FET including sloped threshold voltage adjusting material layer and method of fabricating same
CHIDAMBARRAO DURESETI7 citations84
ROYOLE CORP
3 patentsUS10529924B2Jan 7, 2020
Support and detachment of flexible substrates
ROYOLE CORP3 citations72
US9594287B2Mar 14, 2017
Substrate-less flexible display and method of manufacturing the same
ROYOLE CORP2 citations72
US10236446B2Mar 19, 2019
Manufacturing apparatus for flexible electronics
ROYOLE CORP1 citations62
GLOBALFOUNDRIES INC
2 patentsUS9639652B2May 2, 2017
Compact model for device/circuit/chip leakage current (IDDQ) calculation including process induced uplift factors
GLOBALFOUNDRIES INC2 citations71
US9337338B2May 10, 2016
Tucked active region without dummy poly for performance boost and variation reduction
GLOBALFOUNDRIES INC0 citations52
STEVENS INST TECHNOLOGY
1 patentTHE TRUSTEES OF THE STEVENS INST OF TECH
1 patentSTEVENS INSTITUTE OF TECHNOLOGY
1 patentCHANG PAUL
1 patentGREENE BRIAN J
1 patentENJOIN IND LTD
1 patentBOOTH JR ROGER A
1 patentSHINERICH IND LTD
1 patentADVANCED TECH & MATERIALS CO LTD
1 patentUNIV NORTHEASTERN
1 patentShowing the top 50 of 62 patents by PatentIndex Score.