Inventor
TENG CLARENCE W
US33 patents
Patents
33 patentsUS5043778AAug 27, 1991
Oxide-isolated source/drain transistor
TEXAS INSTRUMENTS INC76 citations96
US4987093AJan 22, 1991
Through-field implant isolated devices and method
TEXAS INSTRUMENTS INC59 citations96
US4963502AOct 16, 1990
Method of making oxide-isolated source/drain transistor
TEXAS INSTRUMENTS INC101 citations96
US4892614AJan 9, 1990
Integrated circuit isolation process
TEXAS INSTRUMENTS INC69 citations96
US4830978AMay 16, 1989
Dram cell and method
TEXAS INSTRUMENTS INC65 citations96
US4656732AApr 14, 1987
Integrated circuit fabrication process
TEXAS INSTRUMENTS INC78 citations96
US4631803ADec 30, 1986
Method of fabricating defect free trench isolation devices
TEXAS INSTRUMENTS INC124 citations96
US4864375ASep 5, 1989
Dram cell and method
TEXAS INSTRUMENTS INC68 citations93
US4842675AJun 27, 1989
Integrated circuit isolation process
TEXAS INSTRUMENTS INC45 citations93
US5894145AApr 13, 1999
Multiple substrate bias random access memory device
TEXAS INSTRUMENTS INC23 citations92
US5671175ASep 23, 1997
Capacitor over bitline DRAM cell
TEXAS INSTRUMENTS INC21 citations92
US5587614ADec 24, 1996
Microplanarization of rough electrodes by thin amorphous layers
TEXAS INSTRUMENTS INC21 citations92
US5352913AOct 4, 1994
Dynamic memory storage capacitor having reduced gated diode leakage
TEXAS INSTRUMENTS INC20 citations92
US5225363AJul 6, 1993
Trench capacitor DRAM cell and method of manufacture
TEXAS INSTRUMENTS INC29 citations92
US5156992AOct 20, 1992
Process for forming poly-sheet pillar transistor DRAM cell
TEXAS INSTRUMENTS INC23 citations92
US5087591AFeb 11, 1992
Contact etch process
TEXAS INSTRUMENTS INC47 citations92
US4983226AJan 8, 1991
Defect free trench isolation devices and method of fabrication
TEXAS INSTRUMENTS INC24 citations92
US4580330AApr 8, 1986
Integrated circuit isolation
TEXAS INSTRUMENTS INC44 citations92
US4561172ADec 31, 1985
Integrated circuit fabrication method utilizing selective etching and oxidation to form isolation regions
TEXAS INSTRUMENTS INC34 citations92
US5202279AApr 13, 1993
Poly sidewall process to reduce gated diode leakage
TEXAS INSTRUMENTS INC16 citations82
US4916524AApr 10, 1990
Dram cell and method
TEXAS INSTRUMENTS INC20 citations82
US5595925AJan 21, 1997
Method for fabricating a multiple well structure for providing multiple substrate bias for DRAM device formed therein
TEXAS INSTRUMENTS INC11 citations74
US5105245AApr 14, 1992
Trench capacitor DRAM cell with diffused bit lines adjacent to a trench
TEXAS INSTRUMENTS INC16 citations74
US5061653AOct 29, 1991
Trench isolation process
TEXAS INSTRUMENTS INC16 citations74
US5028980AJul 2, 1991
Trench capacitor with expanded area
TEXAS INSTRUMENTS INC12 citations74
US4947227AAug 7, 1990
Latch-up resistant CMOS structure
TEXAS INSTRUMENTS INC14 citations74
US4890147ADec 26, 1989
Through-field implant isolated devices and method
TEXAS INSTRUMENTS INC14 citations74
US4660278AApr 28, 1987
Process of making IC isolation structure
TEXAS INSTRUMENTS INC15 citations74
US5364812ANov 15, 1994
High density dynamic RAM cell
TEXAS INSTRUMENTS INC7 citations72
US5057887AOct 15, 1991
High density dynamic ram cell
TEXAS INSTRUMENTS INC9 citations72
US4958206ASep 18, 1990
Diffused bit line trench capacitor dram cell
TEXAS INSTRUMENTS INC9 citations72
US5049519ASep 17, 1991
Latch-up resistant CMOS process
TEXAS INSTRUMENTS INC4 citations63
US4958212ASep 18, 1990
Trench memory cell
TEXAS INSTRUMENTS INC4 citations60