Inventor
HAN JOSEPH H
US8 patents
⚠️ This page may combine multiple inventors who share the name “HAN JOSEPH H”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
7 patentsUS7682891B2Mar 23, 2010
Tunable gate electrode work function material for transistor applications
INTEL CORP19 citations92
US7354849B2Apr 8, 2008
Catalytically enhanced atomic layer deposition process
INTEL CORP13 citations83
US7858525B2Dec 28, 2010
Fluorine-free precursors and methods for the deposition of conformal conductive films for nanointerconnect seed and fill
INTEL CORP5 citations62
US7749906B2Jul 6, 2010
Using unstable nitrides to form semiconductor structures
INTEL CORP3 citations62
US7476615B2Jan 13, 2009
Deposition process for iodine-doped ruthenium barrier layers
INTEL CORP3 citations62
US8344352B2Jan 1, 2013
Using unstable nitrides to form semiconductor structures
INTEL CORP0 citations51
US7982204B2Jul 19, 2011
Using unstable nitrides to form semiconductor structures
INTEL CORP0 citations51