Inventor

HARRINGTON III THOMAS E

US33 patents

⚠️ This page may combine multiple inventors who share the name “HARRINGTON III THOMAS E”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HARRINGTON III THOMAS E

D3 Semiconductor LLC

Surface devices within a vertical power device

Surface devices within a vertical power device

Termination region architecture for vertical power transistors

Device architecture and method for precision enhancement of vertical semiconductor devices

Super junction MOS bipolar transistor having drain gaps

Device architecture and method for improved packing of vertical field effect devices

Device architecture and method for improved packing of vertical field effect devices

Device architecture and method for precision enhancement of vertical semiconductor devices

Device architecture and method for improved packing of vertical field effect devices

Device architecture and method for precision enhancement of vertical semiconductor devices

Termination region architecture for vertical power transistors

Source-gate region architecture in a vertical power semiconductor device

DALLAS SEMICONDUCTOR

Integrated circuit with improved protection against negative transients

Method of fabricating a CMOS IC with reduced susceptibility to PMOS punchthrough

Method of making polysilicon resistor having adjustable temperature coefficients

CMOS integrated circuit with reduced susceptibility to PMOS punchthrough

Integrated circuit with improved battery protection

Process for making integrated circuit with doped silicon dioxide load elements

CMOS integrated circuit with reduced susceptibility to PMOS punchthrough

Enclosed buried channel transistor

Low leakage battery protection diode structure

CMOS integrated circuit with reduced susceptibility to PMOS punchthrough

Integrated circuit with improved battery protection

WOLFSPEED INC

Gate trench power semiconductor devices having improved deep shield connection patterns

Semiconductor devices having gate resistors with low variation in resistance values

Wide bandgap unipolar/bipolar transistor

Semiconductor devices having gate resistors with low variation in resistance values

Edge termination structures for semiconductor devices

Edge termination structures for semiconductor devices

Power semiconductor device with reduced strain

Wide bandgap semiconductor device with sensor element

Power semiconductor device with reduced strain

Zu yue

On-chip electrostatic discharge protection for a semiconductor device