Inventor
CHEN PIN-SHIANG
TW16 patents
⚠️ This page may combine multiple inventors who share the name “CHEN PIN-SHIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
14 patentsUS9490430B1Nov 8, 2016
Field effect transistors and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD16 citations92
US10269981B2Apr 23, 2019
Multi-channel field effect transistors using 2D-material
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10109477B2Oct 23, 2018
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US9559168B2Jan 31, 2017
Field effect transistors and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US11043376B2Jun 22, 2021
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10636651B2Apr 28, 2020
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9660056B2May 23, 2017
3D UTB transistor using 2D-material channels
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11374115B2Jun 28, 2022
Method for forming semiconductor device having boron-doped germanium tin epitaxy structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11018239B2May 25, 2021
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US10879404B2Dec 29, 2020
Multi-channel field effect transistors using 2D-material
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9679961B2Jun 13, 2017
Transistor with wurtzite channel
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9425250B2Aug 23, 2016
Transistor with wurtzite channel
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10777663B2Sep 15, 2020
Semiconductor device having boron-doped germanium tin epitaxy structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10290708B2May 14, 2019
Field effect transistors and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51