Inventor
ALOK DEV
US16 patents
⚠️ This page may combine multiple inventors who share the name “ALOK DEV”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
PHILIPS ELECTRONICS NA
7 patentsUS6303508B1Oct 16, 2001
Superior silicon carbide integrated circuits and method of fabricating
PHILIPS ELECTRONICS NA70 citations96
US6373076B1Apr 16, 2002
Passivated silicon carbide devices with low leakage current and method of fabricating
PHILIPS ELECTRONICS NA46 citations95
US6323506B1Nov 27, 2001
Self-aligned silicon carbide LMOSFET
PHILIPS ELECTRONICS NA40 citations92
US6011278AJan 4, 2000
Lateral silicon carbide semiconductor device having a drift region with a varying doping level
PHILIPS ELECTRONICS NA22 citations92
US6355944B1Mar 12, 2002
Silicon carbide LMOSFET with gate reach-through protection
PHILIPS ELECTRONICS NA19 citations84
US6407014B1Jun 18, 2002
Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices
PHILIPS ELECTRONICS NA4 citations62
US6096663AAug 1, 2000
Method of forming a laterally-varying charge profile in silicon carbide substrate
PHILIPS ELECTRONICS NA3 citations61
KONINKL PHILIPS ELECTRONICS NV
5 patentsUS6559068B2May 6, 2003
Method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor
KONINKL PHILIPS ELECTRONICS NV16 citations83
US6620697B1Sep 16, 2003
Silicon carbide lateral metal-oxide semiconductor field-effect transistor having a self-aligned drift region and method for forming the same
KONINKL PHILIPS ELECTRONICS NV13 citations80
US6703276B2Mar 9, 2004
Passivated silicon carbide devices with low leakage current and method of fabricating
KONINKL PHILIPS ELECTRONICS NV12 citations73
US6593594B1Jul 15, 2003
Silicon carbide n-channel power LMOSFET
KONINKL PHILIPS ELECTRONICS NV7 citations73
US6504184B2Jan 7, 2003
Superior silicon carbide integrated circuits and method of fabricating
KONINKL PHILIPS ELECTRONICS NV9 citations73
UNIV NORTH CAROLINA STATE
4 patentsUS5635412AJun 3, 1997
Methods of fabricating voltage breakdown resistant monocrystalline silicon carbide semiconductor devices
UNIV NORTH CAROLINA STATE51 citations96
US5449925ASep 12, 1995
Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices
UNIV NORTH CAROLINA STATE55 citations96
US5436174AJul 25, 1995
Method of forming trenches in monocrystalline silicon carbide
UNIV NORTH CAROLINA STATE71 citations96
US5318915AJun 7, 1994
Method for forming a p-n junction in silicon carbide
UNIV NORTH CAROLINA STATE49 citations92