Inventor

TOH ENG HUAT

SG232 patents

⚠️ This page may combine multiple inventors who share the name “TOH ENG HUAT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOH ENG HUAT

GLOBALFOUNDRIES SG PTE LTD

Hall element for 3-D sensing using integrated planar and vertical elements and method for producing the same

Magnetic memory cells with high write current and read stability

Programmable integrated circuits and methods of forming the same

Magnetic memory cells with low switching current density

Method of fabricating a silicon tunneling field effect transistor (TFET) with high drive current

Non-volatile memory elements with filament confinement

MRAM with metal-insulator-transition material

Domain wall magnetic memory

High density multi-time programmable resistive memory devices and method of forming thereof

Integrated circuit structures with spin torque transfer magnetic random access memory and methods for fabricating the same

FinFET with isolation

Transistor devices having an anti-fuse configuration and methods of forming the same

LDMOS with improved breakdown voltage

Method for forming a PCRAM with low reset current

Semiconductor device with reduced contact resistance and method of manufacturing thereof

Vertical nanowire based hetero-structure split gate memory

Channel surface technique for fabrication of FinFET devices

Transistors with field plates on fully depleted silicon-on-insulator platform and method of making the same

Drive current enhancement for integrated circuit memory structures

Resistive random access memory devices

On-chip temperature sensing with non-volatile memory elements

Split gate flash memory cells with a trench-formed select gate

Resistive random access memory devices

Memory devices and methods of forming memory devices

Logic gate devices and methods of forming a logic gate device

Integrated circuits with resistive non-volatile memory cells and methods for producing the same

Memory device and a method for forming the memory device

Magnetic tunnel junction ring oscillator with tunable frequency and methods for operating the same

High performance ISFET with ferroelectric material

High coupling ratio split gate memory cell

Selector-resistive random access memory cell

Integrated circuits with solar cells and methods for producing the same

Selector device for a non-volatile memory cell

Fin selector with gated RRAM

Integrated circuits with programmable memory cells and methods for programming the same

High sensing margin magnetic resistive memory device in which a memory cell read and write select transistors to provide different read and write paths

Resistive memory device

Non-volatile resistive random access memory crossbar devices with maximized memory element density and methods of forming the same

Magnetic memory cells with fast read/write speed

Integrated circuit structures with spin torque transfer magnetic random access memory having increased memory cell density and methods for fabricating the same

TOH ENG HUAT

Self-aligned contact for replacement metal gate and silicide last processes

Nano-electro-mechanical system (NEMS) structures with actuatable semiconductor fin on bulk substrates

FinFET with stressors

LDMOS with two gate stacks having different work functions for improved breakdown voltage

Finfet

LDMOS with improved breakdown voltage

Compact RRAM device and methods of making same

Deep depleted channel MOSFET with minimized dopant fluctuation and diffusion levels

TAN SHYUE SENG

Memory cell with decoupled channels

TAN CHUNG FOONG

Channel surface technique for fabrication of FinFET devices