Inventor

LEE KANGHO

SG87 patents

⚠️ This page may combine multiple inventors who share the name “LEE KANGHO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LEE KANGHO

QUALCOMM INC

Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ)

Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices

Amorphous alloy space for perpendicular MTJs

Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device

Spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropy

Magnetic tunnel junction and method for fabricating a magnetic tunnel junction

Spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropy

Magnetic etch stop layer for spin-transfer torque magnetoresistive random access memory magnetic tunnel junction device

Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ)

Dual interface free layer with amorphous cap layer for perpendicular magnetic tunnel junction

Antiferromagnetically coupled spin-torque oscillator with hard perpendicular polarizer

Switching film structure for magnetic random access memory (MRAM) cell

Physically unclonable function based on programming voltage of magnetoresistive random-access memory

Physically unclonable function based on breakdown voltage of metal-insulator-metal device

Amorphous spacerlattice spacer for perpendicular MTJs

Magnetic tunnel junction device

Magnetic random access memory (MRAM)layout with uniform pattern

Spin transfer torque—magnetic tunnel junction device and method of operation

Magnetic tunnel junction and method of fabrication

Non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction

OTP cell with reversed MTJ connection

Magnetic tunnel junction (MTJ) device array

OTP cell with reversed MTJ connection

Magnetic tunnel junction (MTJ) device array

Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (P-MTJ)

Adjusting resistive memory write driver strength based on write error rate (WER) to improve WER yield, and related methods and systems

Physically unclonable function based on the initial logical state of magnetoresistive random-access memory

Physically unclonable function based on the random logical state of magnetoresistive random-access memory

LEE KANGHO

Reducing source loading effect in spin torque transfer magnetoresisitive random access memory (STT-MRAM)

Magnetic tunnel junction device and fabrication

Magnetic tunnel junction device and fabrication

Magnetic random access memory (MRAM) layout with uniform pattern

Multi-level memory cell using multiple magnetic tunnel junctions with varying MGO thickness

GLOBALFOUNDRIES SG PTE LTD

Integrated circuits with magnetic tunnel junctions and methods for producing the same

MRAM chip magnetic shielding

Integrated circuits with programmable memory cells and methods for programming the same

KIM JUNG PILL

OTP cell with reversed MTJ connection

OTP scheme with multiple magnetic tunnel junction devices in a cell

RAO HARI M

Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction

Programmable write driver for STT-MRAM

SAMSUNG ELECTRONICS CO LTD

X-ray detecting method, photographing method using the X-ray detecting method, and X-ray detector using the methods

Method for removing of residual charge, X-ray imaging method and apparatus using the method

KANG SEUNG H

STT MRAM magnetic tunnel junction architecture and integration

One-mask MTJ integration for STT MRAM

CHEN WEI-CHUAN

Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device

WATCHGUARD TECHNOLOGIES INC

Portion of a display panel or computer screen with an icon image

WATCHGUARD TECHNOLOGIES

Device and method for graphically displaying data movement in a secured network

LI XIA

MTP MTJ device

ZHU XIAOCHUN

Magnetic tunnel junction device

HAO WUYANG

Resistance based memory having two-diode access device