Inventor

CHOI HYO-JI

KR9 patents

⚠️ This page may combine multiple inventors who share the name “CHOI HYO-JI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

5 patents

US8785944B2Jul 22, 2014

High electron mobility transistor

SAMSUNG ELECTRONICS CO LTD16 citations83

US9076850B2Jul 7, 2015

High electron mobility transistor

SAMSUNG ELECTRONICS CO LTD4 citations73

US8946773B2Feb 3, 2015

Multi-layer semiconductor buffer structure, semiconductor device and method of manufacturing the semiconductor device using the multi-layer semiconductor buffer structure

SAMSUNG ELECTRONICS CO LTD5 citations72

US9202878B2Dec 1, 2015

Gallium nitride based semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations62

US9209250B2Dec 8, 2015

High electron mobility transistors, methods of manufacturing the same, and electronic devices including the same

SAMSUNG ELECTRONICS CO LTD0 citations41

KIM JUN-YOUN

2 patents

US8741706B2Jun 3, 2014

High electron mobility transistor and method of manufacturing the same

KIM JUN-YOUN3 citations62

US8536623B2Sep 17, 2013

High electron mobility transistor and method of manufacturing the same

KIM JUN-YOUN2 citations62

HWANG IN-JUN

1 patent

US9543391B2Jan 10, 2017

High electron mobility transistor having reduced threshold voltage variation and method of manufacturing the same

HWANG IN-JUN6 citations72

TAK YOUNG-JO

1 patent

US9136430B2Sep 15, 2015

Semiconductor buffer structure, semiconductor device including the same, and method of manufacturing semiconductor device using semiconductor buffer structure

TAK YOUNG-JO6 citations71