P

Inventor

MA PAUL F

US56 patents
⚠️ This page may combine multiple inventors who share the name “MA PAUL F”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

APPLIED MATERIALS INC

45 patents
USRE47440EJun 18, 2019

Apparatus and method for providing uniform flow of gas

APPLIED MATERIALS INC360 citations98
US7780789B2Aug 24, 2010

Vortex chamber lids for atomic layer deposition

APPLIED MATERIALS INC458 citations98
US10014185B1Jul 3, 2018

Selective etch of metal nitride films

APPLIED MATERIALS INC22 citations92
US9048183B2Jun 2, 2015

NMOS metal gate materials, manufacturing methods, and equipment using CVD and ALD processes with metal based precursors

APPLIED MATERIALS INC14 citations84
US9209074B2Dec 8, 2015

Cobalt deposition on barrier surfaces

APPLIED MATERIALS INC5 citations83
US10431493B2Oct 1, 2019

Doping control of metal nitride films

APPLIED MATERIALS INC5 citations82
US10608097B2Mar 31, 2020

Low thickness dependent work-function nMOS integration for metal gate

APPLIED MATERIALS INC2 citations73
US10043709B2Aug 7, 2018

Methods for thermally forming a selective cobalt layer

APPLIED MATERIALS INC5 citations73
US10002834B2Jun 19, 2018

Method and apparatus for protecting metal interconnect from halogen based precursors

APPLIED MATERIALS INC3 citations73
US9847289B2Dec 19, 2017

Protective via cap for improved interconnect performance

APPLIED MATERIALS INC2 citations73
US9748354B2Aug 29, 2017

Multi-threshold voltage structures with a lanthanum nitride film and methods of formation thereof

APPLIED MATERIALS INC5 citations73
US9109754B2Aug 18, 2015

Apparatus and method for providing uniform flow of gas

APPLIED MATERIALS INC4 citations73
US10600685B2Mar 24, 2020

Methods to fill high aspect ratio features on semiconductor substrates with MOCVD cobalt film

APPLIED MATERIALS INC2 citations72
US10204764B2Feb 12, 2019

Methods for forming a metal silicide interconnection nanowire structure

APPLIED MATERIALS INC2 citations72
US10109520B2Oct 23, 2018

Methods for depositing dielectric barrier layers and aluminum containing etch stop layers

APPLIED MATERIALS INC2 citations72
US9613859B2Apr 4, 2017

Direct deposition of nickel silicide nanowire

APPLIED MATERIALS INC5 citations72
US9048294B2Jun 2, 2015

Methods for depositing manganese and manganese nitrides

APPLIED MATERIALS INC6 citations72
US10008412B2Jun 26, 2018

Doping control of metal nitride films

APPLIED MATERIALS INC2 citations71
US9659814B2May 23, 2017

Doping control of metal nitride films

APPLIED MATERIALS INC2 citations71
US10643840B2May 5, 2020

Selective deposition defects removal by chemical etch

APPLIED MATERIALS INC2 citations70
US9466524B2Oct 11, 2016

Method of depositing metals using high frequency plasma

APPLIED MATERIALS INC2 citations63
US11735420B2Aug 22, 2023

Wafer treatment for achieving defect-free self-assembled monolayers

APPLIED MATERIALS INC0 citations62
US11515155B2Nov 29, 2022

Methods for enhancing selectivity in SAM-based selective deposition

APPLIED MATERIALS INC0 citations62
USRE48994EMar 29, 2022

Apparatus and method for providing uniform flow of gas

APPLIED MATERIALS INC0 citations62
US11133155B2Sep 28, 2021

Apparatus for depositing metal films with plasma treatment

APPLIED MATERIALS INC0 citations62
US11049722B2Jun 29, 2021

Methods and materials for modifying the threshold voltage of metal oxide stacks

APPLIED MATERIALS INC0 citations62
US11033930B2Jun 15, 2021

Methods and apparatus for cryogenic gas stream assisted SAM-based selective deposition

APPLIED MATERIALS INC0 citations62
US10950433B2Mar 16, 2021

Methods for enhancing selectivity in SAM-based selective deposition

APPLIED MATERIALS INC1 citations62
US10930472B2Feb 23, 2021

Methods for forming a metal silicide interconnection nanowire structure

APPLIED MATERIALS INC0 citations62
US10770292B2Sep 8, 2020

Wafer treatment for achieving defect-free self-assembled monolayers

APPLIED MATERIALS INC1 citations62
US10752990B2Aug 25, 2020

Apparatus and methods to remove residual precursor inside gas lines post-deposition

APPLIED MATERIALS INC1 citations62
US11587829B2Feb 21, 2023

Doping control of metal nitride films

APPLIED MATERIALS INC0 citations61
US10910263B2Feb 2, 2021

Doping control of metal nitride films

APPLIED MATERIALS INC0 citations61
US10170321B2Jan 1, 2019

Aluminum content control of TiAIN films

APPLIED MATERIALS INC1 citations60
US9076661B2Jul 7, 2015

Methods for manganese nitride integration

APPLIED MATERIALS INC2 citations59
US10784157B2Sep 22, 2020

Doped tantalum nitride for copper barrier applications

APPLIED MATERIALS INC1 citations58
US10665542B2May 26, 2020

Cobalt manganese vapor phase deposition

APPLIED MATERIALS INC0 citations52
US10665450B2May 26, 2020

Methods and apparatus for doping engineering and threshold voltage tuning by integrated deposition of titanium nitride and aluminum films

APPLIED MATERIALS INC0 citations52
US9953926B2Apr 24, 2018

Methods of depositing cobalt manganese films

APPLIED MATERIALS INC0 citations52
US9236467B2Jan 12, 2016

Atomic layer deposition of hafnium or zirconium alloy films

APPLIED MATERIALS INC1 citations52
US10879081B2Dec 29, 2020

Methods of reducing or eliminating defects in tungsten film

APPLIED MATERIALS INC0 citations51
US10707122B2Jul 7, 2020

Methods for depositing dielectric barrier layers and aluminum containing etch stop layers

APPLIED MATERIALS INC0 citations51
US10640870B2May 5, 2020

Gas feedthrough assembly

APPLIED MATERIALS INC0 citations51
US10615041B2Apr 7, 2020

Methods and materials for modifying the threshold voltage of metal oxide stacks

APPLIED MATERIALS INC0 citations51
US10487398B2Nov 26, 2019

Synthesis of metal nitride thin films materials using hydrazine derivatives

APPLIED MATERIALS INC0 citations51

MA PAUL F

2 patents

GANGULI SESHADRI

1 patent

WEI GUODAN

1 patent

CORNELL RES FOUNDATION INC

1 patent

Showing the top 50 of 56 patents by PatentIndex Score.