Inventor
JAIN HARSH NARENDRAKUMAR
US23 patents
⚠️ This page may combine multiple inventors who share the name “JAIN HARSH NARENDRAKUMAR”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
21 patentsUS11101210B2Aug 24, 2021
Methods for manufacturing a memory array having strings of memory cells comprising forming bridge material between memory blocks
MICRON TECHNOLOGY INC4 citations73
US12374619B2Jul 29, 2025
Microelectronic devices with different staircased stadiums having consistent multi-tier step riser height, and related systems and methods
MICRON TECHNOLOGY INC1 citations63
US12588515B2Mar 24, 2026
Electronic devices comprising overlay marks
MICRON TECHNOLOGY INC0 citations62
US12237259B2Feb 25, 2025
Electronic devices comprising multilevel bitlines, and related methods and systems
MICRON TECHNOLOGY INC0 citations62
US11961801B2Apr 16, 2024
Integrated circuitry, memory circuitry comprising strings of memory cells, and method of forming integrated circuitry
MICRON TECHNOLOGY INC0 citations62
US11581264B2Feb 14, 2023
Electronic devices comprising overlay marks, memory devices comprising overlay marks, and related methods
MICRON TECHNOLOGY INC0 citations62
US11417681B2Aug 16, 2022
Memory arrays and methods used in forming a memory array comprising strings of memory cells and operative through-array-vias
MICRON TECHNOLOGY INC0 citations62
US11183456B2Nov 23, 2021
Memory arrays and methods used in forming a memory array
MICRON TECHNOLOGY INC0 citations62
US10985179B2Apr 20, 2021
Memory arrays and methods used in forming a memory array comprising strings of memory cells and operative through-array-vias
MICRON TECHNOLOGY INC0 citations62
US12267997B2Apr 1, 2025
Microelectronic devices comprising stack structures having pillars and elliptical conductive contacts
MICRON TECHNOLOGY INC0 citations60
US12218008B2Feb 4, 2025
Memory device including self-aligned conductive contacts
MICRON TECHNOLOGY INC0 citations60
US11856763B2Dec 26, 2023
Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems
MICRON TECHNOLOGY INC1 citations60
US11682581B2Jun 20, 2023
Memory device including self-aligned conductive contacts
MICRON TECHNOLOGY INC0 citations60
US12525294B2Jan 13, 2026
Method used in forming memory circuitry having non-SGD stair-step structures individually having the collective stairs in one of its flights to have at least two different horizontal depths
MICRON TECHNOLOGY INC0 citations52
US11637178B2Apr 25, 2023
Microelectronic devices including isolation structures neighboring staircase structures, and related memory devices, electronic systems, and methods
MICRON TECHNOLOGY INC0 citations52
US11785775B2Oct 10, 2023
Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems
MICRON TECHNOLOGY INC0 citations51
US12394711B2Aug 19, 2025
Microelectronic devices with staircased stadiums and both through-step and to-step contacts, and related systems and methods
MICRON TECHNOLOGY INC0 citations50
US11830815B2Nov 28, 2023
Microelectronic devices including stair step structures, and related electronic systems and methods
MICRON TECHNOLOGY INC0 citations50
US11700727B2Jul 11, 2023
Microelectronic device structures including tiered stacks comprising staggered block structures separated by slot structures, and related electronic systems and methods
MICRON TECHNOLOGY INC0 citations50
US12482752B2Nov 25, 2025
Memory circuitry and method used in forming memory circuitry
MICRON TECHNOLOGY INC0 citations47
US11641741B2May 2, 2023
Microelectronic devices with tiered blocks separated by progressively spaced slits, and related methods and systems
MICRON TECHNOLOGY INC0 citations43