Inventor
FUKUSHIMA NOBURU
JP19 patents
⚠️ This page may combine multiple inventors who share the name “FUKUSHIMA NOBURU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
18 patentsUS5739563AApr 14, 1998
Ferroelectric type semiconductor device having a barium titanate type dielectric film and method for manufacturing the same
TOSHIBA KK184 citations99
US7091561B2Aug 15, 2006
Field effect transistor and method of manufacturing the same
TOSHIBA KK69 citations98
US5986301ANov 16, 1999
Thin film capacitor with electrodes having a perovskite structure and a metallic conductivity
TOSHIBA KK131 citations98
US6060735AMay 9, 2000
Thin film dielectric device
TOSHIBA KK57 citations95
US5889299AMar 30, 1999
Thin film capacitor
TOSHIBA KK61 citations95
US6914312B2Jul 5, 2005
Field effect transistor having a MIS structure and method of fabricating the same
TOSHIBA KK34 citations92
US5889696AMar 30, 1999
Thin-film capacitor device and RAM device using ferroelectric film
TOSHIBA KK50 citations92
US5935911AAug 10, 1999
Superconducting wire and method of manufacturing the same
TOSHIBA KK22 citations91
US4937696AJun 26, 1990
Protection circuit for a semiconductor device
TOSHIBA KK20 citations79
US6930335B2Aug 16, 2005
Field effect transistor with metal oxide gate insulator and sidewall insulating film
TOSHIBA KK10 citations74
US4757492AJul 12, 1988
Method for recording and reproducing information on or from an optical recording medium
TOSHIBA KK9 citations73
US4642136AFeb 10, 1987
PTC ceramic composition
TOSHIBA KK11 citations73
US6170147B1Jan 9, 2001
Superconducting wire and method of manufacturing the same
TOSHIBA KK11 citations72
US5034359AJul 23, 1991
Insulating composition
TOSHIBA KK9 citations72
US7525144B2Apr 28, 2009
Insulating film and semiconductor device
TOSHIBA KK4 citations63
US5508252AApr 16, 1996
Bi oxide superconductors
TOSHIBA KK2 citations61
US5374610ADec 20, 1994
Insulating composition
TOSHIBA KK4 citations61
US7538013B2May 26, 2009
Method of manufacturing a field effect transistor comprising an insulating film including metal oxide having crystallinity and different in a lattice distance from semiconductor substrate
TOSHIBA KK0 citations52