P

Inventor

FUKUSHIMA NOBURU

JP19 patents
⚠️ This page may combine multiple inventors who share the name “FUKUSHIMA NOBURU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOSHIBA KK

18 patents
US5739563AApr 14, 1998

Ferroelectric type semiconductor device having a barium titanate type dielectric film and method for manufacturing the same

TOSHIBA KK184 citations99
US7091561B2Aug 15, 2006

Field effect transistor and method of manufacturing the same

TOSHIBA KK69 citations98
US5986301ANov 16, 1999

Thin film capacitor with electrodes having a perovskite structure and a metallic conductivity

TOSHIBA KK131 citations98
US6060735AMay 9, 2000

Thin film dielectric device

TOSHIBA KK57 citations95
US5889299AMar 30, 1999

Thin film capacitor

TOSHIBA KK61 citations95
US6914312B2Jul 5, 2005

Field effect transistor having a MIS structure and method of fabricating the same

TOSHIBA KK34 citations92
US5889696AMar 30, 1999

Thin-film capacitor device and RAM device using ferroelectric film

TOSHIBA KK50 citations92
US5935911AAug 10, 1999

Superconducting wire and method of manufacturing the same

TOSHIBA KK22 citations91
US4937696AJun 26, 1990

Protection circuit for a semiconductor device

TOSHIBA KK20 citations79
US6930335B2Aug 16, 2005

Field effect transistor with metal oxide gate insulator and sidewall insulating film

TOSHIBA KK10 citations74
US4757492AJul 12, 1988

Method for recording and reproducing information on or from an optical recording medium

TOSHIBA KK9 citations73
US4642136AFeb 10, 1987

PTC ceramic composition

TOSHIBA KK11 citations73
US6170147B1Jan 9, 2001

Superconducting wire and method of manufacturing the same

TOSHIBA KK11 citations72
US5034359AJul 23, 1991

Insulating composition

TOSHIBA KK9 citations72
US7525144B2Apr 28, 2009

Insulating film and semiconductor device

TOSHIBA KK4 citations63
US5508252AApr 16, 1996

Bi oxide superconductors

TOSHIBA KK2 citations61
US5374610ADec 20, 1994

Insulating composition

TOSHIBA KK4 citations61
US7538013B2May 26, 2009

Method of manufacturing a field effect transistor comprising an insulating film including metal oxide having crystallinity and different in a lattice distance from semiconductor substrate

TOSHIBA KK0 citations52

HIOKI TSUYOSHI

1 patent