Inventor
CHANG VINCENT S
TW6 patents
Patents
6 patentsUS7176138B2Feb 13, 2007
Selective nitride liner formation for shallow trench isolation
TAIWAN SEMICONDUCTOR MFG15 citations92
US7824990B2Nov 2, 2010
Multi-metal-oxide high-K gate dielectrics
TAIWAN SEMICONDUCTOR MFG25 citations91
US7327009B2Feb 5, 2008
Selective nitride liner formation for shallow trench isolation
TAIWAN SEMICONDUCTOR MFG5 citations73
US6864109B2Mar 8, 2005
Method and system for determining a component concentration of an integrated circuit feature
TAIWAN SEMICONDUCTOR MFG10 citations72
US7361572B2Apr 22, 2008
STI liner modification method
TAIWAN SEMICONDUCTOR MFG4 citations62
US7166525B2Jan 23, 2007
High temperature hydrogen annealing of a gate insulator layer to increase etching selectivity between conductive gate structure and gate insulator layer
TAIWAN SEMICONDUCTOR MFG1 citations52