Inventor

HO IU MENG TOM

US9 patents

⚠️ This page may combine multiple inventors who share the name “HO IU MENG TOM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SYMETRIX CORP

2 patents

US6809949B2Oct 26, 2004

Ferroelectric memory

SYMETRIX CORP85 citations96

US7212427B2May 1, 2007

Ferroelectric memory

SYMETRIX CORP8 citations72

SYNPLICITY INC

2 patents

US6734472B2May 11, 2004

Power and ground shield mesh to remove both capacitive and inductive signal coupling effects of routing in integrated circuit device

SYNPLICITY INC77 citations96

US7217887B2May 15, 2007

Power and ground shield mesh to remove both capacitive and inductive signal coupling effects of routing in integrated circuit device

SYNPLICITY INC24 citations91

SYNOPSYS INC

2 patents

US7436008B2Oct 14, 2008

Power and ground shield mesh to remove both capacitive and inductive signal coupling effects of routing in integrated circuit device

SYNOPSYS INC29 citations91

US7774186B2Aug 10, 2010

Power and ground shield mesh to remove both capacitive and inductive signal coupling effects of routing in integrated circuit device

SYNOPSYS INC2 citations61

IOTA TECHNOLOGY INC

1 patent

US7352619B2Apr 1, 2008

Electronic memory with binary storage elements

IOTA TECHNOLOGY INC6 citations56

HO IU MENG TOM

1 patent

US11729989B2Aug 15, 2023

Depletion mode ferroelectric transistors

HO IU MENG TOM0 citations45

HO IU-MENG TOM

1 patent

US8692297B2Apr 8, 2014

Power and ground shield mesh to remove both capacitive and inductive signal coupling effects of routing in integrated circuit device

HO IU-MENG TOM0 citations45