Inventor
JANESKY JASON
US21 patents
⚠️ This page may combine multiple inventors who share the name “JANESKY JASON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
EVERSPIN TECHNOLOGIES INC
19 patentsUS9136464B1Sep 15, 2015
Apparatus and process for manufacturing ST-MRAM having a metal oxide tunnel barrier
EVERSPIN TECHNOLOGIES INC76 citations98
US9093640B2Jul 28, 2015
Method for manufacturing and magnetic devices having double tunnel barriers
EVERSPIN TECHNOLOGIES INC32 citations97
US9548442B2Jan 17, 2017
Magnetoresistive structure having two dielectric layers, and method of manufacturing same
EVERSPIN TECHNOLOGIES INC21 citations94
US10608172B2Mar 31, 2020
Magnetoresistive structure having two dielectric layers, and method of manufacturing same
EVERSPIN TECHNOLOGIES INC3 citations84
US10230046B2Mar 12, 2019
Magnetoresistive structure having two dielectric layers, and method of manufacturing same
EVERSPIN TECHNOLOGIES INC3 citations84
US9893275B2Feb 13, 2018
Magnetoresistive structure having two dielectric layers, and method of manufacturing same
EVERSPIN TECHNOLOGIES INC5 citations84
US9444037B2Sep 13, 2016
Magnetoresistive memory element having a metal oxide tunnel barrier
EVERSPIN TECHNOLOGIES INC5 citations84
US11139429B2Oct 5, 2021
Magnetoresistive structure having two dielectric layers, and method of manufacturing same
EVERSPIN TECHNOLOGIES INC2 citations73
US9543041B2Jan 10, 2017
Configuration and testing for magnetoresistive memory to ensure long term continuous operation
EVERSPIN TECHNOLOGIES INC4 citations73
US9293698B2Mar 22, 2016
Magnetoresistive structure having a metal oxide tunnel barrier and method of manufacturing same
EVERSPIN TECHNOLOGIES INC4 citations73
US9954163B2Apr 24, 2018
Structures and methods for shielding magnetically sensitive components
EVERSPIN TECHNOLOGIES INC2 citations70
US11488647B2Nov 1, 2022
Stacked magnetoresistive structures and methods therefor
EVERSPIN TECHNOLOGIES INC4 citations69
US10600460B2Mar 24, 2020
Perpendicular magnetic memory using spin-orbit torque
EVERSPIN TECHNOLOGIES INC4 citations69
US11925122B2Mar 5, 2024
Magnetoresistive structure having two dielectric layers, and method of manufacturing same
EVERSPIN TECHNOLOGIES INC0 citations62
US10923170B2Feb 16, 2021
Determining bias configuration for write operations in memory to improve device performance during normal operation as well as to improve the effectiveness of testing routines
EVERSPIN TECHNOLOGIES INC0 citations62
US12437828B2Oct 7, 2025
Systems and methods for monitoring and managing memory devices
EVERSPIN TECHNOLOGIES INC0 citations61
US11798646B2Oct 24, 2023
Systems and methods for monitoring and managing memory devices
EVERSPIN TECHNOLOGIES INC0 citations61
US11088317B2Aug 10, 2021
Structures and methods for shielding magnetically sensitive components
EVERSPIN TECHNOLOGIES INC1 citations59
US10262713B2Apr 16, 2019
Determining bias configuration for write operations in memory to improve device performance during normal operation as well as to improve the effectiveness of testing routines
EVERSPIN TECHNOLOGIES INC0 citations52