Inventor

LAFORET DAVID

AT32 patents

⚠️ This page may combine multiple inventors who share the name “LAFORET DAVID”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LAFORET DAVID

INFINEON TECHNOLOGIES AUSTRIA AG

Power MOSFET with seperate gate and field plate trenches

Charge compensation MOSFET with graded epi profile and methods of manufacturing thereof

Semiconductor device with needle-shaped field plate structures

Semiconductor device with needle-shaped field plate structures in a transistor cell region and in an inner termination region

Semiconductor device with a termination mesa between a termination structure and a cell field of field electrode structures

Semiconductor device having a transistor cell region and a termination region with needle-shaped field plate structures

Semiconductor device having a trench gate

Power semiconductor device having different gate crossings, and method for manufacturing thereof

Semiconductor device including a contact structure directly adjoining a mesa section and a field electrode

Semiconductor device having a reduced surface doping in an edge termination area, and method for manufacturing thereof

MOSFET having a drift region with a graded doping profile and methods of manufacturing thereof

Semiconductor device and method of manufacturing the same

Transistor device and method of fabricating a gate of a transistor device

Transistor device having a cell field and method of fabricating a gate of the transistor device

Methods of manufacturing a power MOSFET

Semiconductor device with needle-shaped field plates and a gate structure with edge and node portions

Semiconductor device comprising a field electrode

Semiconductor device comprising a field electrode

Semiconductor device

Semiconductor device having an edge termination area with trench electrodes at different electric potentials, and method for manufacturing thereof

Transistor device with gate resistor

Reduced gate charge field-effect transistor

Method of manufacturing a semiconductor device with trench gate by using a screen oxide layer

Reduced gate charge field-effect transistor

Semiconductor transistor and method for forming the semiconductor transistor

Reducing switching losses associated with a synchronous rectification MOSFET

Needle cell trench MOSFET

Semiconductor device with field electrode and contact structure

INFINEON TECHNOLOGIES AG

Forming silicon oxide layers by radical oxidation and semiconductor device with silicon oxide layer

Semiconductor device, junction field effect transistor and vertical field effect transistor

BLANK OLIVER

Method of manufacturing a semiconductor device using a contact implant and a metallic recombination element and semiconductor

INFINEON TECHNOLOGIES AUSTRIA

Method of manufacturing a gate trench with thick bottom oxide