Inventor

BLANK OLIVER

AT91 patents

⚠️ This page may combine multiple inventors who share the name “BLANK OLIVER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

BLANK OLIVER

INFINEON TECHNOLOGIES AUSTRIA AG

Oxygen inserted Si-layers for reduced contact implant outdiffusion in vertical power devices

Power MOSFET with seperate gate and field plate trenches

Semiconductor device with field electrode structures in a cell area and termination structures in an edge area

Semiconductor device with field electrode structures, gate structures and auxiliary diode structures

Semiconductor device with charge compensation region underneath gate trench

Current sensors and methods of improving accuracy thereof

Semiconductor wafer, semiconductor chip and method of fabricating a semiconductor wafer

Semiconductor device

Semiconductor device with needle-shaped field plate structures

Semiconductor device with needle-shaped field plate structures in a transistor cell region and in an inner termination region

Semiconductor devices and method for manufacturing semiconductor devices

Semiconductor device with field electrode structure

Semiconductor device having polysilicon plugs with silicide crystallites

Semiconductor device having a transistor cell region and a termination region with needle-shaped field plate structures

Scalable current sense transistor

Semiconductor wafer having an auxiliary structure positioned in a scribe line region, semiconductor chip and method of fabricating a semiconductor wafer

Contact structure for transistor devices

Optically detectable reference feature for processing a semiconductor wafer

Contact structure for power semiconductor devices

Optically detectable reference feature for die separation

Semiconductor device including a gate trench and a source trench

Stress-reduced field-effect semiconductor device and method for forming therefor

Semiconductor device having a metallization structure

Semiconductor device having an alignment layer with mask pits

Semiconductor transistor device and method of manufacturing the same

Semiconductor device and method of manufacturing a semiconductor device using an alignment layer

Semiconductor device having a reduced surface doping in an edge termination area, and method for manufacturing thereof

Semiconductor die including an edge termination structure laterally between an active area and a lateral edge region of the die

Semiconductor transistor device having a titled body contact area and method of manufacturing the same

Semiconductor die and method of manufacturing the same

Semiconductor device

Semiconductor device comprising trench structures

Semiconductor die and method of manufacturing the same

Oxide-peeling stopper

INFINEON TECHNOLOGIES AUSTRIA

Semiconductor device with buried gate electrode and gate contacts

Semiconductor device with metal-filled groove in polysilicon gate electrode

Semiconductor device and method for manufacturing

Integrated circuit device with a semiconductor body and method for the production of an integrated circuit device

Semiconductor device and method for forming same

Method for producing a transistor component having a field plate

Semiconductor device

Semiconductor device having a tapered gate structure and method

BLANK OLIVER

Method of manufacturing a semiconductor device using a contact implant and a metallic recombination element and semiconductor

Semiconductor device comprising trench gate and buried source electrodes

Trench semiconductor device and method of manufacturing

SEDLMAIER STEFAN

Stress-reduced field-effect semiconductor device and method for forming therefor

HIRLER FRANZ

Semiconductor component with a space saving edge structure

INFINEON TECHNOLOGIES AG

Semiconductor device having peripheral trench structures

HUTZLER MICHAEL

Method of manufacturing a semiconductor device using an impurity source containing a metallic recombination element and semiconductor device

SIEMIENIEC RALF

Method for producing a plug in a semiconductor body