Inventor

OUVRARD CEDRIC

AT22 patents

⚠️ This page may combine multiple inventors who share the name “OUVRARD CEDRIC”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

OUVRARD CEDRIC

INFINEON TECHNOLOGIES AUSTRIA AG

Power MOSFET with seperate gate and field plate trenches

Charge compensation MOSFET with graded epi profile and methods of manufacturing thereof

Semiconductor device with needle-shaped field plate structures

Semiconductor device with needle-shaped field plate structures in a transistor cell region and in an inner termination region

Semiconductor device having a trench gate

Power semiconductor device having different gate crossings, and method for manufacturing thereof

Semiconductor device having a reduced surface doping in an edge termination area, and method for manufacturing thereof

Methods of manufacturing a power MOSFET

Semiconductor device with needle-shaped field plates and a gate structure with edge and node portions

Semiconductor device

Semiconductor device having an edge termination area with trench electrodes at different electric potentials, and method for manufacturing thereof

Transistor device with gate resistor

Reduced gate charge field-effect transistor

Method of manufacturing a semiconductor device with trench gate by using a screen oxide layer

Reduced gate charge field-effect transistor

Semiconductor transistor and method for forming the semiconductor transistor

Semiconductor device with field electrode and contact structure

Needle cell trench MOSFET

INFINEON TECHNOLOGIES AG

Semiconductor device, junction field effect transistor and vertical field effect transistor

JFET and method of manufacturing thereof

Junction field effect transistor with vertical PN junction

INFINEON TECHNOLOGIES AUSTRIA

Reduced charge transistor