Inventor

CHOI EUN YEOUNG

KR10 patents

⚠️ This page may combine multiple inventors who share the name “CHOI EUN YEOUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

7 patents

US9613800B2Apr 4, 2017

Methods of manufacturing semiconductor devices including an oxide layer

SAMSUNG ELECTRONICS CO LTD2 citations71

US11201166B2Dec 14, 2021

Three dimensional semiconductor device including first and second channels and buried insulation and conductive patterns and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations70

US10355099B2Jul 16, 2019

Semiconductor device

SAMSUNG ELECTRONICS CO LTD1 citations61

US11864383B2Jan 2, 2024

Vertical-type memory device

SAMSUNG ELECTRONICS CO LTD0 citations60

US11723203B2Aug 8, 2023

Method of manufacturing three dimensional semiconductor device including first and second channels and buried insulation and conductive patterns

SAMSUNG ELECTRONICS CO LTD0 citations60

US11164884B2Nov 2, 2021

Vertical-type memory device

SAMSUNG ELECTRONICS CO LTD0 citations60

US11094709B2Aug 17, 2021

Method of manufacturing semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations51

CHOI EUN YEOUNG

1 patent

US10559584B2Feb 11, 2020

Semiconductor device including a dielectric layer

CHOI EUN YEOUNG3 citations69

CHOI EUN-YEOUNG

1 patent

US9698233B2Jul 4, 2017

Tunnel insulation layer structures, methods of manufacturing the same, and vertical memory devices including the same

CHOI EUN-YEOUNG3 citations69

GO HYUN YONG

1 patent

US9490140B2Nov 8, 2016

Method for manufacturing semiconductor device

GO HYUN YONG2 citations55