P

Inventor

CHEN YINAN

CN23 patents
⚠️ This page may combine multiple inventors who share the name “CHEN YINAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NANYA TECHNOLOGY CORP

16 patents
US6797611B1Sep 28, 2004

Method of fabricating contact holes on a semiconductor chip

NANYA TECHNOLOGY CORP24 citations92
US6750116B1Jun 15, 2004

Method for fabricating asymmetric inner structure in contacts or trenches

NANYA TECHNOLOGY CORP35 citations92
US7982315B2Jul 19, 2011

Semiconductor structure and method of making the same

NANYA TECHNOLOGY CORP10 citations84
US7078315B2Jul 18, 2006

Method for eliminating inverse narrow width effects in the fabrication of DRAM device

NANYA TECHNOLOGY CORP8 citations74
US6762099B1Jul 13, 2004

Method for fabricating buried strap out-diffusions of vertical transistor

NANYA TECHNOLOGY CORP11 citations68
US6093601AJul 25, 2000

Method of fabricating crown capacitor by using oxynitride mask

NANYA TECHNOLOGY CORP5 citations62
US6071790AJun 6, 2000

Method of crown capacitor rounding by oxidant dipping process

NANYA TECHNOLOGY CORP4 citations62
US7041567B2May 9, 2006

Isolation structure for trench capacitors and fabrication method thereof

NANYA TECHNOLOGY CORP4 citations61
US6140179AOct 31, 2000

Method of forming a crown capacitor for a DRAM cell

NANYA TECHNOLOGY CORP5 citations61
US6909136B2Jun 21, 2005

Trench-capacitor DRAM cell having a folded gate conductor

NANYA TECHNOLOGY CORP3 citations60
US7144799B2Dec 5, 2006

Method for pre-retaining CB opening

NANYA TECHNOLOGY CORP3 citations59
US6133089AOct 17, 2000

Method for fabricating a DRAM capacitor

NANYA TECHNOLOGY CORP2 citations59
US7799676B2Sep 21, 2010

Method of manufacturing a contact structure to avoid open issue

NANYA TECHNOLOGY CORP0 citations51
US6753225B1Jun 22, 2004

Method of forming a gate structure

NANYA TECHNOLOGY CORP0 citations49
US6117268ASep 12, 2000

Apparatus for carrying substrates processed in an etching process and protecting thereof from being dampened by droplets

NANYA TECHNOLOGY CORP1 citations47
US7138338B2Nov 21, 2006

Method and composite hard mask for forming deep trenches in a semiconductor substrate

NANYA TECHNOLOGY CORP1 citations45

KONINKLIJKE PHILIPS NV

3 patents

CHEN YINAN

2 patents

YAN MING

1 patent

UNIV HENAN POLYTECHNIC

1 patent