Inventor
POWELL DON CARL
US39 patents
Patents
39 patentsUS6617624B2Sep 9, 2003
Metal gate electrode stack with a passivating metal nitride layer
MICRON TECHNOLOGY INC44 citations96
US6410968B1Jun 25, 2002
Semiconductor device with barrier layer
MICRON TECHNOLOGY INC31 citations96
US6265297B1Jul 24, 2001
Ammonia passivation of metal gate electrodes to inhibit oxidation of metal
MICRON TECHNOLOGY INC50 citations96
US6734531B2May 11, 2004
Use of selective oxidation conditions for dielectric conditioning
MICRON TECHNOLOGY INC13 citations93
US6458714B1Oct 1, 2002
Method of selective oxidation in semiconductor manufacture
MICRON TECHNOLOGY INC53 citations93
US7245010B2Jul 17, 2007
System and device including a barrier layer
MICRON TECHNOLOGY INC20 citations92
US6537677B1Mar 25, 2003
Process for fabricating films of uniform properties on semiconductor devices
MICRON TECHNOLOGY INC13 citations92
US6475883B2Nov 5, 2002
Method for forming a barrier layer
MICRON TECHNOLOGY INC29 citations92
US6471780B1Oct 29, 2002
Process for fabricating films of uniform properties on semiconductor devices
MICRON TECHNOLOGY INC21 citations92
US6440382B1Aug 27, 2002
Method for producing water for use in manufacturing semiconductors
MICRON TECHNOLOGY INC16 citations92
US7678678B2Mar 16, 2010
Method to chemically remove metal impurities from polycide gate sidewalls
MICRON TECHNOLOGY INC8 citations84
US7235497B2Jun 26, 2007
Selective oxidation methods and transistor fabrication methods
MICRON TECHNOLOGY INC11 citations84
US6890867B2May 10, 2005
Transistor fabrication methods comprising selective wet-oxidation
MICRON TECHNOLOGY INC12 citations84
US6620742B2Sep 16, 2003
In-situ use of dichloroethene and NH3 in an H2O steam based oxidation system to provide a source of chlorine
MICRON TECHNOLOGY INC14 citations84
US6576979B2Jun 10, 2003
Use of selective oxidation conditions for dielectric conditioning
MICRON TECHNOLOGY INC11 citations82
US6555487B1Apr 29, 2003
Method of selective oxidation conditions for dielectric conditioning
MICRON TECHNOLOGY INC12 citations82
US7651956B1Jan 26, 2010
Process for fabricating films of uniform properties on semiconductor devices
MICRON TECHNOLOGY INC3 citations74
US7358171B2Apr 15, 2008
Method to chemically remove metal impurities from polycide gate sidewalls
MICRON TECHNOLOGY INC6 citations74
US7129188B2Oct 31, 2006
Transistor fabrication methods
MICRON TECHNOLOGY INC8 citations74
US7060514B2Jun 13, 2006
Process for fabricating films of uniform properties on semiconductor devices
MICRON TECHNOLOGY INC4 citations74
US7015151B2Mar 21, 2006
Transistor fabrication methods comprising selective wet oxidation
MICRON TECHNOLOGY INC10 citations74
US6833280B1Dec 21, 2004
Process for fabricating films of uniform properties on semiconductor devices
MICRON TECHNOLOGY INC5 citations74
US6787479B2Sep 7, 2004
Method for producing water for use in manufacturing semiconductors
MICRON TECHNOLOGY INC5 citations74
US6784124B2Aug 31, 2004
Methods of selective oxidation conditions for dielectric conditioning
MICRON TECHNOLOGY INC5 citations74
US6774443B2Aug 10, 2004
System and device including a barrier layer
MICRON TECHNOLOGY INC3 citations74
US6670231B2Dec 30, 2003
Method of forming a dielectric layer in a semiconductor device
MICRON TECHNOLOGY INC10 citations74
US6649278B2Nov 18, 2003
Process for fabricating films of uniform properties on semiconductor devices
MICRON TECHNOLOGY INC7 citations74
US6576964B1Jun 10, 2003
Dielectric layer for a semiconductor device having less current leakage and increased capacitance
MICRON TECHNOLOGY INC4 citations74
US6451714B2Sep 17, 2002
System and method for selectively increasing surface temperature of an object
MICRON TECHNOLOGY INC7 citations74
US6423617B1Jul 23, 2002
In-situ use of dichloroethene and NH3 in an H2O steam based oxidation system to provide a source of chlorine
MICRON TECHNOLOGY INC11 citations74
US7247584B2Jul 24, 2007
System and method for selectively increasing surface temperature of an object
MICRON TECHNOLOGY INC2 citations63
US6837938B2Jan 4, 2005
Apparatus associatable with a deposition chamber to enhance uniformity of properties of material layers formed on semiconductor substrates therein
MICRON TECHNOLOGY INC2 citations63
US7442655B2Oct 28, 2008
Selective oxidation methods and transistor fabrication methods
MICRON TECHNOLOGY INC0 citations52
US7095088B2Aug 22, 2006
System and device including a barrier layer
MICRON TECHNOLOGY INC0 citations52
US7071120B2Jul 4, 2006
Method for producing water for use in manufacturing semiconductors
MICRON TECHNOLOGY INC0 citations52
US7033554B2Apr 25, 2006
Apparatus for producing water for use in manufacturing semiconductors
MICRON TECHNOLOGY INC0 citations52
US6998356B2Feb 14, 2006
Method of fabricating a semiconductor device including a dielectric layer formed using a reactive agent
MICRON TECHNOLOGY INC0 citations52
US6960264B2Nov 1, 2005
Process for fabricating films of uniform properties on semiconductor devices
MICRON TECHNOLOGY INC0 citations52
US6770574B2Aug 3, 2004
Method of forming a dielectric layer
MICRON TECHNOLOGY INC0 citations52