Inventor · disambiguated record
Edouard D. De Frésart
Also filed as: DE FRESART EDOUARD · DE FRESART EDOUARD D · DE FRESART EDOUARD DENIS · DE FRÉSART EDOUARD D
44 granted patents·4 pending applications·766 citations·filing 1992–2017
98Inventor score
Top patents by PatentIndex Score
48 records- 0194US9443845B1Transistor body control circuit and an integrated circuitFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Sep 13, 2016·47 cites·20 claims
- 0294US9324800B1Bidirectional MOSFET with suppressed bipolar snapback and method of manufactureFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Apr 26, 2016·13 cites·20 claims
- 0393US8502287B2Semiconductor devices with enclosed void cavitiesRADIC LJUBO·Filed 2010·Granted Aug 6, 2013·21 cites·16 claims
- 0493US6084268APower MOSFET device having low on-resistance and methodSEMICONDUCTOR COMPONENTS IND·Filed 1997·Granted Jul 4, 2000·139 cites·14 claims
- 0591US9559198B2Semiconductor device and method of manufacture thereforFREESCALE SEMICONDUCTOR INC·Filed 2013·Granted Jan 31, 2017·16 cites·20 claims
- 0690US9472662B2Bidirectional power transistor with shallow body trenchFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Oct 18, 2016·7 cites·19 claims
- 0790US5273930AMethod of forming a non-selective silicon-germanium epitaxial filmMOTOROLA INC·Filed 1992·Granted Dec 28, 1993·128 cites·18 claims
- 0888US9397213B2Trench gate FET with self-aligned source contactFREESCALE SEMICONDUCTOR INC·Filed 2014·Granted Jul 19, 2016·9 cites·16 claims
- 0987US9680003B2Trench MOSFET shield poly contactFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Jun 13, 2017·5 cites·14 claims
- 1085US9553184B2Edge termination for trench gate FETFREESCALE SEMICONDUCTOR INC·Filed 2014·Granted Jan 24, 2017·8 cites·19 claims
- 1184US7378317B2Superjunction power MOSFETFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted May 27, 2008·10 cites·5 claims
- 1284US5631484AMethod of manufacturing a semiconductor device and termination structureMOTOROLA INC·Filed 1995·Granted May 20, 1997·66 cites·20 claims
- 1381US9178027B1Bidirectional trench FET with gate-based resurfZITOUNI MOANISS·Filed 2014·Granted Nov 3, 2015·5 cites·20 claims
- 1481US7919388B2Methods for fabricating semiconductor devices having reduced gate-drain capacitanceFREESCALE SEMICONDUCTOR INC·Filed 2009·Granted Apr 5, 2011·7 cites·18 claims
- 1580US9722070B2Methods of manufacturing trench semiconductor devices with edge termination structuresFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Aug 1, 2017·3 cites·21 claims
- 1680US5286661AMethod of forming a bipolar transistor having an emitter overhangMOTOROLA INC·Filed 1992·Granted Feb 15, 1994·47 cites·15 claims
- 1778US9362394B2Power device termination structures and methodsZITOUNI MOANISS·Filed 2014·Granted Jun 7, 2016·4 cites·20 claims
- 1878US6373100B1Semiconductor device and method for fabricating the sameSEMICONDUCTOR COMPONENTS IND·Filed 1998·Granted Apr 16, 2002·50 cites·6 claims
- 1977US7211477B2High voltage field effect device and methodFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted May 1, 2007·6 cites·6 claims
- 2077US6787858B2Carrier injection protection structureFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Sep 7, 2004·25 cites·13 claims
- 2176US9293535B2Power MOSFET current sense structure and methodWANG PEILIN·Filed 2012·Granted Mar 22, 2016·5 cites·13 claims
- 2276US7510938B2Semiconductor superjunction structureFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Mar 31, 2009·12 cites·20 claims
- 2375US8143126B2Method for forming a vertical MOS transistorCHEN JINGJING·Filed 2010·Granted Mar 27, 2012·6 cites·18 claims
- 2475US8021926B2Methods for forming semiconductor devices with low resistance back-side couplingFREESCALE SEMICONDUCTOR INC·Filed 2009·Granted Sep 20, 2011·5 cites·20 claims
- 2575US7592230B2Trench power device and methodFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Sep 22, 2009·6 cites·16 claims
- 2674US5272096AMethod for making a bipolar transistor having a silicon carbide layerMOTOROLA INC·Filed 1992·Granted Dec 21, 1993·35 cites·27 claims
- 2771US10074743B2Trench MOSFET shield poly contactNXP USA INC·Filed 2017·Granted Sep 11, 2018·1 cites·5 claims
- 2870US7651918B2Strained semiconductor power device and methodFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Jan 26, 2010·4 cites·15 claims
- 2969US7074681B2Semiconductor component and method of manufacturingFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Jul 11, 2006·12 cites·32 claims
- 3066US8735978B2Semiconductor devices having reduced gate-drain capacitanceRADIC LJUBO·Filed 2011·Granted May 27, 2014·2 cites·18 claims
- 3165US8759909B2Power MOSFET structure and methodWANG PEILIN·Filed 2012·Granted Jun 24, 2014·2 cites·6 claims
- 3263US5436180AMethod for reducing base resistance in epitaxial-based bipolar transistorMOTOROLA INC·Filed 1994·Granted Jul 25, 1995·22 cites·19 claims
- 3360US8932928B2Power MOSFET structure and methodWANG PEILIN·Filed 2014·Granted Jan 13, 2015·1 cites·10 claims
- 3458US7598517B2Superjunction trench device and methodFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Oct 6, 2009·1 cites·22 claims
- 3557US8264082B2Semiconductor devices with low resistance back-side couplingDE FRESART EDOUARD·Filed 2011·Granted Sep 11, 2012·1 cites·19 claims
- 3657US6747332B2Semiconductor component having high voltage MOSFET and method of manufactureMOTOROLA INC·Filed 2002·Granted Jun 8, 2004·8 cites·27 claims
- 3756US8030153B2High voltage TMOS semiconductor device with low gate charge structure and method of makingFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Oct 4, 2011·1 cites·14 claims
- 3856US6828650B2Bipolar junction transistor structure with improved current gain characteristicsMOTOROLA INC·Filed 2002·Granted Dec 7, 2004·7 cites·28 claims
- 3949US9419128B2Bidirectional trench FET with gate-based resurfZITOUNI MOANISS·Filed 2015·Granted Aug 16, 2016·0 cites·20 claims
- 4049US5498578AMethod for selectively forming semiconductor regionsMOTOROLA INC·Filed 1994·Granted Mar 12, 1996·19 cites·20 claims
- 4146US9368576B2Methods of manufacturing trench semiconductor devices with edge termination structuresWANG PEILIN·Filed 2012·Granted Jun 14, 2016·0 cites·17 claims
- 4239US9105495B2Semiconductor device and related fabrication methodsWANG PEILIN·Filed 2011·Granted Aug 11, 2015·0 cites·20 claims
- 4338US2014159146A1Trench gate transistor and method of fabricating sameWANG PEILIN·Filed 2013·Application pending·0 cites
- 4437US2006043479A1Metal oxide semiconductor device including a shielding structure for low gate-drain capacitancePARRIS PATRICE·Filed 2004·Application pending·0 cites
- 4537US2003001216A1Semiconductor component and method of manufacturingMOTOROLA INC·Filed 2001·Application pending·0 cites
- 4635US6593199B1Method of manufacturing a semiconductor component and semiconductor component thereofMOTOROLA INC·Filed 2002·Granted Jul 15, 2003·0 cites·29 claims
- 4732US8895394B2Trench FET with source recess etchQIN GANMING·Filed 2012·Granted Nov 25, 2014·0 cites·16 claims
- 4832US2006134862A1CMOS NVM bitcell and integrated circuitPARRIS PATRICE·Filed 2004·Application pending·0 cites
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